Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC

T. H. Scabarozi, P. Eklund, J. Emmerlich, H. Högberg, T. Meehan, P. Finkel, M. W. Barsoum, J. D. Hettinger, L. Hultman, S. E. Lofland

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We have investigated the anisotropy in electronic transport of the layered ternary Ti2GeC by comparing the results of measurements on c-axis oriented epitaxial thin-film and polycrystalline bulk samples. The electrical conductivities, Hall coefficients, and magnetoresistances were analyzed within a multi-band framework. An adequate description of the magnetotransport data on the film with the highest mobility required the use of the explicit field-dependent conductivity tensor with three conduction bands. The analysis indicated that n ≈ p, although with n ≈ 3.5 × 1027 m- 3. The ratio of the a- to c-axis conductivities is small and contrary to theoretical predictions.

Original languageEnglish (US)
Pages (from-to)498-501
Number of pages4
JournalSolid State Communications
Volume146
Issue number11-12
DOIs
StatePublished - Jun 1 2008

Fingerprint

Galvanomagnetic effects
Epitaxial films
Magnetoresistance
Conduction bands
Tensors
Anisotropy
Thin films
conductivity
anisotropy
electronics
Hall effect
conduction bands
tensors
electrical resistivity
thin films
predictions
Electric Conductivity

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Scabarozi, T. H., Eklund, P., Emmerlich, J., Högberg, H., Meehan, T., Finkel, P., ... Lofland, S. E. (2008). Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC. Solid State Communications, 146(11-12), 498-501. https://doi.org/10.1016/j.ssc.2008.03.026
Scabarozi, T. H. ; Eklund, P. ; Emmerlich, J. ; Högberg, H. ; Meehan, T. ; Finkel, P. ; Barsoum, M. W. ; Hettinger, J. D. ; Hultman, L. ; Lofland, S. E. / Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC. In: Solid State Communications. 2008 ; Vol. 146, No. 11-12. pp. 498-501.
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Scabarozi, TH, Eklund, P, Emmerlich, J, Högberg, H, Meehan, T, Finkel, P, Barsoum, MW, Hettinger, JD, Hultman, L & Lofland, SE 2008, 'Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC', Solid State Communications, vol. 146, no. 11-12, pp. 498-501. https://doi.org/10.1016/j.ssc.2008.03.026

Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC. / Scabarozi, T. H.; Eklund, P.; Emmerlich, J.; Högberg, H.; Meehan, T.; Finkel, P.; Barsoum, M. W.; Hettinger, J. D.; Hultman, L.; Lofland, S. E.

In: Solid State Communications, Vol. 146, No. 11-12, 01.06.2008, p. 498-501.

Research output: Contribution to journalArticle

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AU - Scabarozi, T. H.

AU - Eklund, P.

AU - Emmerlich, J.

AU - Högberg, H.

AU - Meehan, T.

AU - Finkel, P.

AU - Barsoum, M. W.

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AU - Hultman, L.

AU - Lofland, S. E.

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Scabarozi TH, Eklund P, Emmerlich J, Högberg H, Meehan T, Finkel P et al. Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC. Solid State Communications. 2008 Jun 1;146(11-12):498-501. https://doi.org/10.1016/j.ssc.2008.03.026