Unified modeling for memristive devices based on charge-flux constitutive relationships

Le Zheng, Sangho Shin, Sung Mo Steve Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A unified modeling approach is proposed to cover a broad range of memristive devices. The modular structure of the model enables it to represent behaviors of different types of devices. Resulted from theoretical analyses, the window function is uniquely controlled by the memristive flux. This not only solves the stability problem at boundaries present in previous models, but also reveals that an equivalent charge-flux constitutive relationship can be obtained from various types of memristive devices. Simulations on three device examples show that our model exhibits the device properties such as the frequency-dependent hysteresis, the limited memductance switching range with boundary assurances, the linear/nonlinear dopant drift, and the threshold voltages for read/write mode.

Original languageEnglish (US)
Title of host publication2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
Pages213-216
Number of pages4
DOIs
StatePublished - Sep 9 2013
Event2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013 - Beijing, China
Duration: May 19 2013May 23 2013

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
CountryChina
CityBeijing
Period5/19/135/23/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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