Ultra-low power non-volatile resistive crossbar memory based on pull up resistors

Shawkat Ali, Jinho Bae, Chong Hyun Lee, Sangho Shin, Nobuhiko P. Kobayashi

    Research output: Contribution to journalArticlepeer-review

    10 Scopus citations

    Abstract

    To realize a flexible and ultra-low power non-volatile resistive random access memory (NVRRAM), we propose a 3 × 3 resistive memory array comprised of crossbar memristors and a pull-up resistor connected to each column bar (1R-CM). This architecture forms a voltage divider network, which directly reads a parallel data of a row in the form of voltage instead of current. In the proposed structure, the optimum value of the pull-up resistor was found to be 10 MΩ. Poly(4-vinylphenol) (PVP) material is utilized in the memristor to achieve high OFF/ON resistance ratio of ∼1000 as a high resistance state (HRS) is 10 GΩ and a low resistance state (LRS) is 10 MΩ. The operating voltage for writing and reading are ±2 V and 0.5 V in current bound of 10–100 nA, respectively, and consumes ultra-low power (<8.33 nW) during operation. The proposed memory demonstrates bendability down to 10 mm with bending endurance of 1000 cycles and retention time for more than 180 days. It is fabricated on a plastic substrate by using direct-printing technique electrohydrodynamic (EHD) at ambient conditions that can be used in wearable electronics.

    Original languageEnglish (US)
    Pages (from-to)73-78
    Number of pages6
    JournalOrganic Electronics
    Volume41
    DOIs
    StatePublished - Feb 1 2017

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Biomaterials
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry
    • Electrical and Electronic Engineering

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