Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites

Wei Xue; Tianhong Cui

doi:10.1016/j.sse.2009.06.003

Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites

Wei Xue, Tianhong Cui

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report thin-film transistors (TFTs) capable of controlling mobilities in a broad range using self-assembled nanocomposite multilayers. Single-walled carbon nanotubes (SWNTs) and SiO₂ nanoparticles are vertically stacked on a substrate as the semiconducting and dielectric materials, respectively. The number of assembled layers can adjust the nanotube interconnection and tune the mobilities of the transistors. Our experiments show that the mobility can be enhanced to 35 times, and the highest observed mobility is 333.04 cm²/V s. Furthermore, we find that the reliability of the devices is increased with the increasing number of SWNT layers in the film. Our results demonstrate an effective technique to produce reliable and high-performance thin-film micro/nanoelectronic devices.

Original language	English (US)
Pages (from-to)	1050-1055
Number of pages	6
Journal	Solid-State Electronics
Volume	53
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2009.06.003
State	Published - Sep 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2009.06.003

Cite this

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title = "Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites",

abstract = "We report thin-film transistors (TFTs) capable of controlling mobilities in a broad range using self-assembled nanocomposite multilayers. Single-walled carbon nanotubes (SWNTs) and SiO2 nanoparticles are vertically stacked on a substrate as the semiconducting and dielectric materials, respectively. The number of assembled layers can adjust the nanotube interconnection and tune the mobilities of the transistors. Our experiments show that the mobility can be enhanced to 35 times, and the highest observed mobility is 333.04 cm2/V s. Furthermore, we find that the reliability of the devices is increased with the increasing number of SWNT layers in the film. Our results demonstrate an effective technique to produce reliable and high-performance thin-film micro/nanoelectronic devices.",

author = "Wei Xue and Tianhong Cui",

note = "Funding Information: This work is partially supported by the Defense Advanced Research Projects Agency (DARPA) MEMS/NEMS Fundamental Research Program through the Micro/Nano Fluidic Fundamentals Focus (MF3) Center. We also acknowledge the Nanofabrication Center and Characterization Facility at the University of Minnesota for the help with the fabrication and characterization.",

year = "2009",

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doi = "10.1016/j.sse.2009.06.003",

language = "English (US)",

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journal = "Solid-State Electronics",

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T1 - Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites

AU - Xue, Wei

AU - Cui, Tianhong

N1 - Funding Information: This work is partially supported by the Defense Advanced Research Projects Agency (DARPA) MEMS/NEMS Fundamental Research Program through the Micro/Nano Fluidic Fundamentals Focus (MF3) Center. We also acknowledge the Nanofabrication Center and Characterization Facility at the University of Minnesota for the help with the fabrication and characterization.

PY - 2009/9

Y1 - 2009/9

N2 - We report thin-film transistors (TFTs) capable of controlling mobilities in a broad range using self-assembled nanocomposite multilayers. Single-walled carbon nanotubes (SWNTs) and SiO2 nanoparticles are vertically stacked on a substrate as the semiconducting and dielectric materials, respectively. The number of assembled layers can adjust the nanotube interconnection and tune the mobilities of the transistors. Our experiments show that the mobility can be enhanced to 35 times, and the highest observed mobility is 333.04 cm2/V s. Furthermore, we find that the reliability of the devices is increased with the increasing number of SWNT layers in the film. Our results demonstrate an effective technique to produce reliable and high-performance thin-film micro/nanoelectronic devices.

AB - We report thin-film transistors (TFTs) capable of controlling mobilities in a broad range using self-assembled nanocomposite multilayers. Single-walled carbon nanotubes (SWNTs) and SiO2 nanoparticles are vertically stacked on a substrate as the semiconducting and dielectric materials, respectively. The number of assembled layers can adjust the nanotube interconnection and tune the mobilities of the transistors. Our experiments show that the mobility can be enhanced to 35 times, and the highest observed mobility is 333.04 cm2/V s. Furthermore, we find that the reliability of the devices is increased with the increasing number of SWNT layers in the film. Our results demonstrate an effective technique to produce reliable and high-performance thin-film micro/nanoelectronic devices.

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Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube composites

Abstract

All Science Journal Classification (ASJC) codes

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