The effect of {1012} twin boundary on the evolution of defect substructure

F. Wang; C. D. Barrett; K. Hazeli; K. D. Molodov; T. Al-Samman; A. Oppedal; D. A. Molodov; A. Kontsos; K. T. Ramesh; H. El Kadiri; S. R. Agnew

doi:10.1007/978-3-319-52392-7_27

The effect of {1012} twin boundary on the evolution of defect substructure

F. Wang, C. D. Barrett, K. Hazeli, K. D. Molodov, T. Al-Samman, A. Oppedal, D. A. Molodov, A. Kontsos, K. T. Ramesh, H. El Kadiri, S. R. Agnew

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pure Mg single crystals were deformed at room temperature along two orientations in sequence, in order to activate a specific dislocation slip mode followed by {1012} twinning. The defects in both the matrix and twin crystals were analyzed with a transmission electron microscope (TEM). This study reveals the collective evolution of the defect substructure when a dislocated crystal is “invaded” by a moving twin boundary. When primarily [c]-containing defects in the matrix were incorporated by a moving twin boundary, including 〈c+a〉, pure [c] dislocations and I₁ stacking faults, the twin contains homogeneously distributed I₁ stacking faults, which in some instances appear to be connected on twin boundary to the faults in the matrix.

Original language	English (US)
Title of host publication	Magnesium Technology 2017
Editors	Neale R. Neelameggham, Alok Singh, Kiran N. Solanki, Dmytro Orlov
Publisher	Springer International Publishing
Pages	175-180
Number of pages	6
ISBN (Print)	9783319523910
DOIs	https://doi.org/10.1007/978-3-319-52392-7_27
State	Published - 2017
Externally published	Yes
Event	International Symposium on Magnesium Technology, 2017 - San Diego, United States Duration: Feb 26 2017 → Mar 2 2017

Publication series

Name	Minerals, Metals and Materials Series
Volume	Part F8
ISSN (Print)	2367-1181
ISSN (Electronic)	2367-1696

Conference

Conference	International Symposium on Magnesium Technology, 2017
Country/Territory	United States
City	San Diego
Period	2/26/17 → 3/2/17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy Engineering and Power Technology
Mechanics of Materials
Metals and Alloys
Materials Chemistry

Access to Document

10.1007/978-3-319-52392-7_27

Cite this

Wang, F., Barrett, C. D., Hazeli, K., Molodov, K. D., Al-Samman, T., Oppedal, A., Molodov, D. A., Kontsos, A., Ramesh, K. T., El Kadiri, H., & Agnew, S. R. (2017). The effect of {1012} twin boundary on the evolution of defect substructure. In N. R. Neelameggham, A. Singh, K. N. Solanki, & D. Orlov (Eds.), Magnesium Technology 2017 (pp. 175-180). (Minerals, Metals and Materials Series; Vol. Part F8). Springer International Publishing. https://doi.org/10.1007/978-3-319-52392-7_27

@inproceedings{83d162bc0dee49a5bd337dc1208798df,

title = "The effect of {1012} twin boundary on the evolution of defect substructure",

abstract = "Pure Mg single crystals were deformed at room temperature along two orientations in sequence, in order to activate a specific dislocation slip mode followed by {1012} twinning. The defects in both the matrix and twin crystals were analyzed with a transmission electron microscope (TEM). This study reveals the collective evolution of the defect substructure when a dislocated crystal is “invaded” by a moving twin boundary. When primarily [c]-containing defects in the matrix were incorporated by a moving twin boundary, including 〈c+a〉, pure [c] dislocations and I1 stacking faults, the twin contains homogeneously distributed I1 stacking faults, which in some instances appear to be connected on twin boundary to the faults in the matrix.",

author = "F. Wang and Barrett, {C. D.} and K. Hazeli and Molodov, {K. D.} and T. Al-Samman and A. Oppedal and Molodov, {D. A.} and A. Kontsos and Ramesh, {K. T.} and {El Kadiri}, H. and Agnew, {S. R.}",

note = "Publisher Copyright: {\textcopyright} The Minerals, Metals & Materials Society 2017.; International Symposium on Magnesium Technology, 2017 ; Conference date: 26-02-2017 Through 02-03-2017",

year = "2017",

doi = "10.1007/978-3-319-52392-7_27",

language = "English (US)",

isbn = "9783319523910",

series = "Minerals, Metals and Materials Series",

publisher = "Springer International Publishing",

pages = "175--180",

editor = "Neelameggham, {Neale R.} and Alok Singh and Solanki, {Kiran N.} and Dmytro Orlov",

booktitle = "Magnesium Technology 2017",

}

Wang, F, Barrett, CD, Hazeli, K, Molodov, KD, Al-Samman, T, Oppedal, A, Molodov, DA, Kontsos, A, Ramesh, KT, El Kadiri, H & Agnew, SR 2017, The effect of {1012} twin boundary on the evolution of defect substructure. in NR Neelameggham, A Singh, KN Solanki & D Orlov (eds), Magnesium Technology 2017. Minerals, Metals and Materials Series, vol. Part F8, Springer International Publishing, pp. 175-180, International Symposium on Magnesium Technology, 2017, San Diego, United States, 2/26/17. https://doi.org/10.1007/978-3-319-52392-7_27

The effect of {1012} twin boundary on the evolution of defect substructure. / Wang, F.; Barrett, C. D.; Hazeli, K. et al.
Magnesium Technology 2017. ed. / Neale R. Neelameggham; Alok Singh; Kiran N. Solanki; Dmytro Orlov. Springer International Publishing, 2017. p. 175-180 (Minerals, Metals and Materials Series; Vol. Part F8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The effect of {1012} twin boundary on the evolution of defect substructure

AU - Wang, F.

AU - Barrett, C. D.

AU - Hazeli, K.

AU - Molodov, K. D.

AU - Al-Samman, T.

AU - Oppedal, A.

AU - Molodov, D. A.

AU - Kontsos, A.

AU - Ramesh, K. T.

AU - El Kadiri, H.

AU - Agnew, S. R.

N1 - Publisher Copyright: © The Minerals, Metals & Materials Society 2017.

PY - 2017

Y1 - 2017

N2 - Pure Mg single crystals were deformed at room temperature along two orientations in sequence, in order to activate a specific dislocation slip mode followed by {1012} twinning. The defects in both the matrix and twin crystals were analyzed with a transmission electron microscope (TEM). This study reveals the collective evolution of the defect substructure when a dislocated crystal is “invaded” by a moving twin boundary. When primarily [c]-containing defects in the matrix were incorporated by a moving twin boundary, including 〈c+a〉, pure [c] dislocations and I1 stacking faults, the twin contains homogeneously distributed I1 stacking faults, which in some instances appear to be connected on twin boundary to the faults in the matrix.

AB - Pure Mg single crystals were deformed at room temperature along two orientations in sequence, in order to activate a specific dislocation slip mode followed by {1012} twinning. The defects in both the matrix and twin crystals were analyzed with a transmission electron microscope (TEM). This study reveals the collective evolution of the defect substructure when a dislocated crystal is “invaded” by a moving twin boundary. When primarily [c]-containing defects in the matrix were incorporated by a moving twin boundary, including 〈c+a〉, pure [c] dislocations and I1 stacking faults, the twin contains homogeneously distributed I1 stacking faults, which in some instances appear to be connected on twin boundary to the faults in the matrix.

UR - http://www.scopus.com/inward/record.url?scp=85042264489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042264489&partnerID=8YFLogxK

U2 - 10.1007/978-3-319-52392-7_27

DO - 10.1007/978-3-319-52392-7_27

M3 - Conference contribution

AN - SCOPUS:85042264489

SN - 9783319523910

T3 - Minerals, Metals and Materials Series

SP - 175

EP - 180

BT - Magnesium Technology 2017

A2 - Neelameggham, Neale R.

A2 - Singh, Alok

A2 - Solanki, Kiran N.

A2 - Orlov, Dmytro

PB - Springer International Publishing

T2 - International Symposium on Magnesium Technology, 2017

Y2 - 26 February 2017 through 2 March 2017

ER -

The effect of {1012} twin boundary on the evolution of defect substructure

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