Study and Preparation of High-Tc Superconducting (HTSC) Thin Films for Electronic Applications

Siu Wai Chan, C. T. Rogers, S. J. Allen, M. Biazzo, Eugene W. Chase, T. L. Cheeks, Frank Derosa, Dah Min David Hwang, P. F. Miceli, S. M. Sampere, Barry J. Wilkens, Robert R. Krchnavek

Research output: Contribution to journalArticlepeer-review


High-quality superconducting YBa2Cu3O7−x thin films are reproducibty prepared through thermal co-evaporation of BaF2, Y, and Cu. Uniformity in thickness and composition of the deposited films can be achieved for a 2.5-in-diameter area on the substrate holder. Four-probe resistivity, critical current measurements, and X-ray diffractions were used to characterize these films after a post-deposition annealing in mixture of O2 and H2O. Highly “c”-oriented films with total transition temperature above 90 K were reproducibly made on (001)SrTiO3 with critical current above 105 A/cm2 at 77 K. The total transition temperatures (Tc at R =0) of YBa2Cu3O7−x films on ZrO2, (001) YAG, (001) MgO, and (001) MgAl2O4 are 87, 74, 63, and 57 K, respectively. The effect of the post-deposition processing ambient on the preparation of YBa2Cu3O7−x thin films was studied. The role of H2O vapor and the role of an HF getter (e.g., SiO2) during the high-temperature anneal is understood through a thermodynamic analysis of the fluorine removal reaction. Photolithography and argon ion milling have been employed to produce YBa2Cu3O7−x wires from several micrometers to submicrometer in size. The resulting wires behaved as scaled down bulk superconducting films not weak links. Modification of superconducting thin films induced by laser irradiation (beam diameter 5 µm, λ = 515 nm) in a controlled ambient was studied. The two types of films (pure YBa2Cu3O7−x films and mixture of YBa2Cu3O7−x and Y2Ba4Cu8Ox films) exhibit different transport behavior after modification. The mixture films show characteristic second transition at 76 K independent of the increase of room temperature resistance, while the pure YBa2Cu3O7−x film exhibits decreasing second transition temperature with increasing room temperature resistance. The properties of the modified region can be recovered by plasma oxidation at room temperature. This technique may prove to be a viable way for fabricating novel structures for scientific studies and device applications.

Original languageEnglish (US)
Pages (from-to)558-565
Number of pages8
JournalIEEE Transactions on Components, Hybrids, and Manufacturing Technology
Issue number4
StatePublished - Dec 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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