Structural and electronic properties of BaBi1-xTlxO3 (0.0≤x≤0.50)

Shu Li, K. V. Ramanujachary, Martha Greenblatt

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6 Scopus citations


Structural and physical properties of BaBi1-xTlxO3 were investigated by means of powder X-ray diffraction, electrical resistivity and magnetic susceptibility measurements. For 0.0≤x≤0.20, the compounds are monoclinic and n-type semiconductors; while for 0.40<x≤0.50, the phases are orthorhombic and p-type semiconductors. A mixed phase region of both monoclinic and orthorhombic compounds is observed at 0.20<x<0.40. The resistivity of the orthorhombic phase is about two orders of magnitude lower than that of monoclinic phase. BaBi0.5Tl0.5O3, which is isoelectronic with BaPbO3, is a single phase material with orthorhombic unit cell parameters a=6.076( 1 ) A ̊, b=6.056( 1 ) A ̊ and c=8.549( 1 ) A ̊. The monoclinic-orthorhombic structural phase transition and the concomitant variations in the physical properties of BaBi1-xTlxO3 are attributed to the suppression of the charge density wave state in BaBiO3, as a result of TlIII substitution. Superconductivity was found at 8 K in BaBi0.25Tl0.25Pb0.5O3, which is isoelectric with BaBi0.5Tl0.5O3.

Original languageEnglish (US)
Pages (from-to)535-542
Number of pages8
JournalPhysica C: Superconductivity and its applications
Issue number5-6
StatePublished - Apr 1 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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