Structural and electronic properties of BaBi1-xTlxO3 (0.0≤x≤0.50)

Shu Li; K. V. Ramanujachary; Martha Greenblatt

doi:10.1016/0921-4534(90)90056-K

Structural and electronic properties of BaBi_1-xTl_xO₃ (0.0≤x≤0.50)

Shu Li, K. V. Ramanujachary, Martha Greenblatt

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Structural and physical properties of BaBi_1-xTl_xO₃ were investigated by means of powder X-ray diffraction, electrical resistivity and magnetic susceptibility measurements. For 0.0≤x≤0.20, the compounds are monoclinic and n-type semiconductors; while for 0.40<x≤0.50, the phases are orthorhombic and p-type semiconductors. A mixed phase region of both monoclinic and orthorhombic compounds is observed at 0.20<x<0.40. The resistivity of the orthorhombic phase is about two orders of magnitude lower than that of monoclinic phase. BaBi_0.5Tl_0.5O₃, which is isoelectronic with BaPbO₃, is a single phase material with orthorhombic unit cell parameters a=6.076( 1 ) A ̊, b=6.056( 1 ) A ̊ and c=8.549( 1 ) A ̊. The monoclinic-orthorhombic structural phase transition and the concomitant variations in the physical properties of BaBi_1-xTl_xO₃ are attributed to the suppression of the charge density wave state in BaBiO₃, as a result of Tl^III substitution. Superconductivity was found at 8 K in BaBi_0.25Tl_0.25Pb_0.5O₃, which is isoelectric with BaBi_0.5Tl_0.5O₃.

Original language	English (US)
Pages (from-to)	535-542
Number of pages	8
Journal	Physica C: Superconductivity and its applications
Volume	166
Issue number	5-6
DOIs	https://doi.org/10.1016/0921-4534(90)90056-K
State	Published - Apr 1 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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@article{cfc7f5eaea65441c9f4ad94921ae70bd,

title = "Structural and electronic properties of BaBi1-xTlxO3 (0.0≤x≤0.50)",

abstract = "Structural and physical properties of BaBi1-xTlxO3 were investigated by means of powder X-ray diffraction, electrical resistivity and magnetic susceptibility measurements. For 0.0≤x≤0.20, the compounds are monoclinic and n-type semiconductors; while for 0.400.5Tl0.5O3, which is isoelectronic with BaPbO3, is a single phase material with orthorhombic unit cell parameters a=6.076( 1 ) A ̊, b=6.056( 1 ) A ̊ and c=8.549( 1 ) A ̊. The monoclinic-orthorhombic structural phase transition and the concomitant variations in the physical properties of BaBi1-xTlxO3 are attributed to the suppression of the charge density wave state in BaBiO3, as a result of TlIII substitution. Superconductivity was found at 8 K in BaBi0.25Tl0.25Pb0.5O3, which is isoelectric with BaBi0.5Tl0.5O3.",

author = "Shu Li and Ramanujachary, {K. V.} and Martha Greenblatt",

note = "Funding Information: Fine. This work was supported in part by the Offtce of Naval Research and by National Science Foundation-solid State Chemistry Program Grant DMR-87-14072.",

year = "1990",

month = apr,

day = "1",

doi = "10.1016/0921-4534(90)90056-K",

language = "English (US)",

volume = "166",

pages = "535--542",

journal = "Physica C: Superconductivity and its applications",

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T1 - Structural and electronic properties of BaBi1-xTlxO3 (0.0≤x≤0.50)

AU - Li, Shu

AU - Ramanujachary, K. V.

AU - Greenblatt, Martha

N1 - Funding Information: Fine. This work was supported in part by the Offtce of Naval Research and by National Science Foundation-solid State Chemistry Program Grant DMR-87-14072.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - Structural and physical properties of BaBi1-xTlxO3 were investigated by means of powder X-ray diffraction, electrical resistivity and magnetic susceptibility measurements. For 0.0≤x≤0.20, the compounds are monoclinic and n-type semiconductors; while for 0.400.5Tl0.5O3, which is isoelectronic with BaPbO3, is a single phase material with orthorhombic unit cell parameters a=6.076( 1 ) A ̊, b=6.056( 1 ) A ̊ and c=8.549( 1 ) A ̊. The monoclinic-orthorhombic structural phase transition and the concomitant variations in the physical properties of BaBi1-xTlxO3 are attributed to the suppression of the charge density wave state in BaBiO3, as a result of TlIII substitution. Superconductivity was found at 8 K in BaBi0.25Tl0.25Pb0.5O3, which is isoelectric with BaBi0.5Tl0.5O3.

AB - Structural and physical properties of BaBi1-xTlxO3 were investigated by means of powder X-ray diffraction, electrical resistivity and magnetic susceptibility measurements. For 0.0≤x≤0.20, the compounds are monoclinic and n-type semiconductors; while for 0.400.5Tl0.5O3, which is isoelectronic with BaPbO3, is a single phase material with orthorhombic unit cell parameters a=6.076( 1 ) A ̊, b=6.056( 1 ) A ̊ and c=8.549( 1 ) A ̊. The monoclinic-orthorhombic structural phase transition and the concomitant variations in the physical properties of BaBi1-xTlxO3 are attributed to the suppression of the charge density wave state in BaBiO3, as a result of TlIII substitution. Superconductivity was found at 8 K in BaBi0.25Tl0.25Pb0.5O3, which is isoelectric with BaBi0.5Tl0.5O3.

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Structural and electronic properties of BaBi_1-xTl_xO₃ (0.0≤x≤0.50)

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