Solution-based fabrication of P-channel and N-channel thin-film transistors using random and aligned carbon nanotube networks

Yan Duan, Jason L. Juhala, Benjamin W. Griffith, Vianney J. Uwizeye, Wei Xue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since discovered in the early 1990s, single-walled carbon nanotubes (SWNTs) have attracted significant attention for many research fields. In the long term, micro-and nanoelectronics are considered to be one of the most valuable applications of SWNTs. The development of the next generation devices involves the mass fabrication and integration of SWNT field-effect transistors (FETs) to form logic gates, which are the basic units of integrated circuits (ICs). To create logic gates, both p- and n-type SWNT FETs are needed. However, the SWNT FETs are typically p-type in air without special treatment, with holes as the majority charge carriers in SWNTs. Here in this paper, we investigate the pchannel and n-channel SWNT FETs using two solution-based fabrication processes. One method is to use layer-by-layer selfassembly to create SWNT random networks and the other is based on dielectrophoresis-aligned SWNTs. A low-cost, easyto- control method is introduced to convert p-type FETs to ntype. By coating a polyethylenimine (PEI) layer on the surface, the transistor demonstrates the typical n-channel characteristics. The resulting devices are air-stable outside a vacuum or an inert environment. The combination of the simple fabrication methods, easy conversion of the devices, and satisfactory device performance can promote further development of nanotube-based electronics.

Original languageEnglish (US)
Title of host publicationASME 2012 International Mechanical Engineering Congress and Exposition, IMECE 2012
Pages97-102
Number of pages6
EditionPARTS A AND B
DOIs
StatePublished - Dec 1 2012
EventASME 2012 International Mechanical Engineering Congress and Exposition, IMECE 2012 - Houston, TX, United States
Duration: Nov 9 2012Nov 15 2012

Publication series

NameASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
NumberPARTS A AND B
Volume9

Other

OtherASME 2012 International Mechanical Engineering Congress and Exposition, IMECE 2012
CountryUnited States
CityHouston, TX
Period11/9/1211/15/12

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Solution-based fabrication of P-channel and N-channel thin-film transistors using random and aligned carbon nanotube networks'. Together they form a unique fingerprint.

Cite this