Solution-based fabrication and characterization of a voltage inverter using random carbon nanotube networks

Yan Duan, Nicholas E. Holmes, Alexander L. Ellard, Jianlong Gao, Wei Xue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconducting carbon nanotubes (CNTs) are considered as one of the most promising candidates to replace silicon in future nano-electronics. Single-walled carbon nanotubes (SWNTs) have been used as an active channel material of field effect transistors (FETs). The nanotube-based circuit shows great potential in future electronics and computer technology. Integrating SWNT FETs to form logic gates - the basic units of integrated circuits (ICs) - needs both p- and n-type SWNT FETs. However, without doping, annealing or other special treatment, the obtained SWNT FETs are typically p-type. Here we report our SWNT-based logic gate, a voltage inverter, using simple fabrication methods. The components of the inverter logic gate, p-type and n-type SWNT FETs, are fabricated using low-cost materials and easy-to-control solution-based process. The introduction of polyethylenimine (PEI), a polymer with high electron-donating ability, to the device successfully converts the p-type FET to an n-type device. The resulting devices are air-stable outside a vacuum or an inert environment. Our results demonstrate that both p-type and n-type FETs produce typical field effects and the voltage inverter exhibits satisfactory switching characteristics. The combination of the simple fabrication methods, easy conversion of the transistors, and satisfactory logic gate switching performance can influence fundamental research in nano-materials and practical applications of nano-electronics.

Original languageEnglish (US)
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages393-396
Number of pages4
DOIs
StatePublished - Dec 1 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: Aug 5 2013Aug 8 2013

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period8/5/138/8/13

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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