RRAM-based TCAMs for pattern search

Le Zheng, Sangho Shin, Scott Lloyd, Maya Gokhale, Kyungmin Kim, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

Content Addressable Memory (CAM) is beneficial to applications that require high-speed pattern searching as it provides fast associative lookup operations. As the amount of data to search continues to grow, reducing power consumption while minimizing the costs for speed and area is the main thread of research in designing large capacity CAMs. In this work, we are presenting an active memory architecture incorporating a searchable resistive memory. The proposed architecture incorporates processing logic in close proximity to the RRAM and the RRAM-based TCAM, where the unit TCAM cell is comprised of five transistors and two memristors. Analyzed and simulated performance (e.g., latency, energy consumption, and storage density) of the RRAM-based TCAM at various technology nodes are presented and compared to those of prior CAM/TCAM designs.

Original languageEnglish (US)
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1382-1385
Number of pages4
ISBN (Electronic)9781479953400
DOIs
StatePublished - Jul 29 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: May 22 2016May 25 2016

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2016-July
ISSN (Print)0271-4310

Other

Other2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
CountryCanada
CityMontreal
Period5/22/165/25/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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