TY - GEN
T1 - RRAM-based TCAMs for pattern search
AU - Zheng, Le
AU - Shin, Sangho
AU - Lloyd, Scott
AU - Gokhale, Maya
AU - Kim, Kyungmin
AU - Kang, Sung Mo
N1 - Funding Information:
This work was supported in part by the University of California, and in part by the UC Lab Fees Program (LF 326181)
Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/29
Y1 - 2016/7/29
N2 - Content Addressable Memory (CAM) is beneficial to applications that require high-speed pattern searching as it provides fast associative lookup operations. As the amount of data to search continues to grow, reducing power consumption while minimizing the costs for speed and area is the main thread of research in designing large capacity CAMs. In this work, we are presenting an active memory architecture incorporating a searchable resistive memory. The proposed architecture incorporates processing logic in close proximity to the RRAM and the RRAM-based TCAM, where the unit TCAM cell is comprised of five transistors and two memristors. Analyzed and simulated performance (e.g., latency, energy consumption, and storage density) of the RRAM-based TCAM at various technology nodes are presented and compared to those of prior CAM/TCAM designs.
AB - Content Addressable Memory (CAM) is beneficial to applications that require high-speed pattern searching as it provides fast associative lookup operations. As the amount of data to search continues to grow, reducing power consumption while minimizing the costs for speed and area is the main thread of research in designing large capacity CAMs. In this work, we are presenting an active memory architecture incorporating a searchable resistive memory. The proposed architecture incorporates processing logic in close proximity to the RRAM and the RRAM-based TCAM, where the unit TCAM cell is comprised of five transistors and two memristors. Analyzed and simulated performance (e.g., latency, energy consumption, and storage density) of the RRAM-based TCAM at various technology nodes are presented and compared to those of prior CAM/TCAM designs.
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U2 - 10.1109/ISCAS.2016.7527507
DO - 10.1109/ISCAS.2016.7527507
M3 - Conference contribution
AN - SCOPUS:84983427179
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 1382
EP - 1385
BT - ISCAS 2016 - IEEE International Symposium on Circuits and Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
Y2 - 22 May 2016 through 25 May 2016
ER -