Abstract
Noise measurements taken at accelerated stressing conditions do not work for the prediction of VLSI interconnect lifetime. This is because a crucial feature of the resistance changes under accelerated bias, which could provide insight into metallization reliability, is obscured by spectral analysis. Distinctive resistance transients occur sporadically during accelerated life testing and it is the presence of these transients that make Fourier analysis inappropriate. Recent work has shown that abrupt changes of resistance (ACRs) in a dc biased thin metal film can be correlated with voiding processes. It is the sensitivity of a measurement system designed to detect very low level noise fluctuations that allows one to detect these small resistance. The analysis of this data from a time-domain perspective has great potential for advancing the understanding of damage processes in metallization. This presentation will provide details of the detection of resistance transients, evidence of their correlation to voiding processes, and data from a detection system designed to monitor the transients.
| Original language | English (US) |
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| Pages | 7-12 |
| Number of pages | 6 |
| State | Published - Dec 1 1997 |
| Event | Proceedings of the 1997 IEEE International Integrated Reliability Workshop - Tahoe, CA, USA Duration: Oct 13 1997 → Oct 16 1997 |
Other
| Other | Proceedings of the 1997 IEEE International Integrated Reliability Workshop |
|---|---|
| City | Tahoe, CA, USA |
| Period | 10/13/97 → 10/16/97 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering