Raman spectroscopy diagnostics for high-tc thin films

L. A. Farrow, Siu Wai Chan, L. H. Greene, W. L. Feldmann, T. Venkatesan, W. A. Bonner, R. R. Krchnavek, S. J. Allen

Research output: Contribution to journalArticlepeer-review


Raman spectroscopy can provide information about stoichiometry, oxygen content, and crystal structure of high-TC thin films in a rapid, contactless, non-destructive manner at room temperature. Data are presented for both polycrystalline and single crystal-like films. An example is given of the potential utility for direct local analysis of patterned films with features as small as 1μ m.

Original languageEnglish (US)
Pages (from-to)282-289
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Mar 19 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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