Pulsed plasma CVD of fluorocarbon thin films

Catherine B. Labelle; Kenneth K.S. Lau; Karen K. Gleason

doi:10.1109/IITC.1999.787077

Pulsed plasma CVD of fluorocarbon thin films

Catherine B. Labelle, Kenneth K.S. Lau, Karen K. Gleason

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pulsed PECVD has been used to deposit a range of fluorocarbon films utilizing three different precursors: hexafluoropropylene oxide (HFPO), 1,1,2,2-tetrafluoroethane (C₂H₂F₄), and difluoromethane (CH₂F₂). C-1s XPS shows that films from HFPO are dominated by CF₂ groups, films from CH₂F₂ are dominated by C-CF groups, and films from C₂H₂F₄ have significant concentrations of both groups. Gas-phase FTIR has been used to identify the species in each pulsed plasma effluent and the pulsed plasma chemistry has been inferred from them. Large differences in gas-phase effluent species have been found between the three precursors, and a correlation can be drawn between the dominant reactions in a pulsed plasma and the resulting films. Finally, ¹⁹F and ¹³C nuclear magnetic resonance (NMR) spectroscopy has been used to further define the various film structures, and these more detailed structural analyses have been used to correlate specific structural configurations to thermal stability.

Original language	English (US)
Title of host publication	Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	56-58
Number of pages	3
ISBN (Electronic)	0780351746, 9780780351745
DOIs	https://doi.org/10.1109/IITC.1999.787077
State	Published - 1999
Externally published	Yes
Event	1999 IEEE International Interconnect Technology Conference, IITC 1999 - San Francisco, United States Duration: May 24 1999 → May 26 1999

Publication series

Name	Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Conference

Conference	1999 IEEE International Interconnect Technology Conference, IITC 1999
Country/Territory	United States
City	San Francisco
Period	5/24/99 → 5/26/99

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Process Chemistry and Technology

Access to Document

10.1109/IITC.1999.787077

Cite this

Labelle, C. B., Lau, K. K. S., & Gleason, K. K. (1999). Pulsed plasma CVD of fluorocarbon thin films. In Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999 (pp. 56-58). Article 787077 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1999.787077

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title = "Pulsed plasma CVD of fluorocarbon thin films",

abstract = "Pulsed PECVD has been used to deposit a range of fluorocarbon films utilizing three different precursors: hexafluoropropylene oxide (HFPO), 1,1,2,2-tetrafluoroethane (C2H2F4), and difluoromethane (CH2F2). C-1s XPS shows that films from HFPO are dominated by CF2 groups, films from CH2F2 are dominated by C-CF groups, and films from C2H2F4 have significant concentrations of both groups. Gas-phase FTIR has been used to identify the species in each pulsed plasma effluent and the pulsed plasma chemistry has been inferred from them. Large differences in gas-phase effluent species have been found between the three precursors, and a correlation can be drawn between the dominant reactions in a pulsed plasma and the resulting films. Finally, 19F and 13C nuclear magnetic resonance (NMR) spectroscopy has been used to further define the various film structures, and these more detailed structural analyses have been used to correlate specific structural configurations to thermal stability.",

author = "Labelle, {Catherine B.} and Lau, {Kenneth K.S.} and Gleason, {Karen K.}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 IEEE International Interconnect Technology Conference, IITC 1999 ; Conference date: 24-05-1999 Through 26-05-1999",

year = "1999",

doi = "10.1109/IITC.1999.787077",

language = "English (US)",

series = "Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999",

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Labelle, CB, Lau, KKS & Gleason, KK 1999, Pulsed plasma CVD of fluorocarbon thin films. in Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999., 787077, Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999, Institute of Electrical and Electronics Engineers Inc., pp. 56-58, 1999 IEEE International Interconnect Technology Conference, IITC 1999, San Francisco, United States, 5/24/99. https://doi.org/10.1109/IITC.1999.787077

Pulsed plasma CVD of fluorocarbon thin films. / Labelle, Catherine B.; Lau, Kenneth K.S.; Gleason, Karen K.
Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc., 1999. p. 56-58 787077 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Pulsed PECVD has been used to deposit a range of fluorocarbon films utilizing three different precursors: hexafluoropropylene oxide (HFPO), 1,1,2,2-tetrafluoroethane (C2H2F4), and difluoromethane (CH2F2). C-1s XPS shows that films from HFPO are dominated by CF2 groups, films from CH2F2 are dominated by C-CF groups, and films from C2H2F4 have significant concentrations of both groups. Gas-phase FTIR has been used to identify the species in each pulsed plasma effluent and the pulsed plasma chemistry has been inferred from them. Large differences in gas-phase effluent species have been found between the three precursors, and a correlation can be drawn between the dominant reactions in a pulsed plasma and the resulting films. Finally, 19F and 13C nuclear magnetic resonance (NMR) spectroscopy has been used to further define the various film structures, and these more detailed structural analyses have been used to correlate specific structural configurations to thermal stability.

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Labelle CB, Lau KKS, Gleason KK. Pulsed plasma CVD of fluorocarbon thin films. In Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc. 1999. p. 56-58. 787077. (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). doi: 10.1109/IITC.1999.787077

Pulsed plasma CVD of fluorocarbon thin films

Abstract

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All Science Journal Classification (ASJC) codes

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