Polarization independent δ-strained InGaAs/InGaAsP quantum well waveguide modulator

Y. Zhu, S. Saini, R. Bartolo, T. Ren, M. Dagenais, F. Johnson, H. Shen, J. Pamulapati, W. Zhou

Research output: Contribution to journalConference articlepeer-review

Abstract

To address the problem of strong polarization dependence of quantum well (QW) modulators, a new δ-strained quantum well structure is proposed. The δ-strained MQW structure consists of five periods of 9 nm In0.53Ga0.47As quantum well and 10 nm In0.27Ga0.73As0.57P0.43 barrier, which are lattice-matched to the InP substrate. The δ-strained structure was grown by solid source molecular beam epitaxy (MBE). The modulator exhibits excellent polarization insensitivity, high extinction ratio, high speed response and low driving voltage.

Original languageEnglish (US)
Pages (from-to)846-847
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA
Duration: Nov 8 1999Nov 11 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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