Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films

V. N. Smolyaninova; M. Rajeswari; R. Kennedy; M. Overby; S. E. Lofland; L. Z. Chen; R. L. Greene

doi:10.1063/1.1868869

Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films

V. N. Smolyaninova, M. Rajeswari, R. Kennedy, M. Overby, S. E. Lofland, L. Z. Chen, R. L. Greene

Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report charge-ordered Bi0.4 Ca0.6 Mn O3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4 Ca0.6 Mn O3 make them very promising for photonic device application.

Original language	English (US)
Article number	071922
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	7
DOIs	https://doi.org/10.1063/1.1868869
State	Published - Feb 14 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1868869

Cite this

@article{63d80f48e90a48ffa6a3bd77e6b47279,

title = "Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films",

abstract = "We report charge-ordered Bi0.4 Ca0.6 Mn O3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4 Ca0.6 Mn O3 make them very promising for photonic device application.",

author = "Smolyaninova, {V. N.} and M. Rajeswari and R. Kennedy and M. Overby and Lofland, {S. E.} and Chen, {L. Z.} and Greene, {R. L.}",

note = "Funding Information: We acknowledge I. I. Smolyaninov for helpful discussions, C. S. Nelson for providing us with XRD data, H. Balci, J. Higgins, B. Taylor, and A. Porter for experimental help. This work is supported by the NSF under grants DMR-0348939 and DMR-0116619 and in part by the Maryland MRSEC, grant DMR-00-80008. ",

year = "2005",

month = feb,

day = "14",

doi = "10.1063/1.1868869",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films

AU - Smolyaninova, V. N.

AU - Rajeswari, M.

AU - Kennedy, R.

AU - Overby, M.

AU - Lofland, S. E.

AU - Chen, L. Z.

AU - Greene, R. L.

N1 - Funding Information: We acknowledge I. I. Smolyaninov for helpful discussions, C. S. Nelson for providing us with XRD data, H. Balci, J. Higgins, B. Taylor, and A. Porter for experimental help. This work is supported by the NSF under grants DMR-0348939 and DMR-0116619 and in part by the Maryland MRSEC, grant DMR-00-80008.

PY - 2005/2/14

Y1 - 2005/2/14

N2 - We report charge-ordered Bi0.4 Ca0.6 Mn O3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4 Ca0.6 Mn O3 make them very promising for photonic device application.

AB - We report charge-ordered Bi0.4 Ca0.6 Mn O3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4 Ca0.6 Mn O3 make them very promising for photonic device application.

UR - http://www.scopus.com/inward/record.url?scp=17044373233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044373233&partnerID=8YFLogxK

U2 - 10.1063/1.1868869

DO - 10.1063/1.1868869

M3 - Article

AN - SCOPUS:17044373233

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071922

ER -

Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this