Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films

V. N. Smolyaninova, M. Rajeswari, R. Kennedy, M. Overby, S. E. Lofland, L. Z. Chen, R. L. Greene

    Research output: Contribution to journalArticlepeer-review

    28 Scopus citations

    Abstract

    We report charge-ordered Bi0.4 Ca0.6 Mn O3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4 Ca0.6 Mn O3 make them very promising for photonic device application.

    Original languageEnglish (US)
    Article number071922
    Pages (from-to)1-3
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number7
    DOIs
    StatePublished - Feb 14 2005

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Fingerprint

    Dive into the research topics of 'Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films'. Together they form a unique fingerprint.

    Cite this