Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films

V. N. Smolyaninova, M. Rajeswari, R. Kennedy, M. Overby, S. E. Lofland, L. Z. Chen, R. L. Greene

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Abstract

We report charge-ordered Bi0.4 Ca0.6 Mn O3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4 Ca0.6 Mn O3 make them very promising for photonic device application.

Original languageEnglish (US)
Article number071922
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number7
DOIs
StatePublished - Feb 14 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Smolyaninova, V. N., Rajeswari, M., Kennedy, R., Overby, M., Lofland, S. E., Chen, L. Z., & Greene, R. L. (2005). Photoinduced resistivity changes in Bi0.4 Ca0.6 Mn O3 thin films. Applied Physics Letters, 86(7), 1-3. [071922]. https://doi.org/10.1063/1.1868869