Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Shawkat Ali; Jinho Bae; Kyung Hyun Choi; Chong Hyun Lee; Yang Hoi Doh; Sangho Shin; Nobuhiko P. Kobayashi

doi:10.1016/j.orgel.2014.11.028

Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Shawkat Ali, Jinho Bae, Kyung Hyun Choi, Chong Hyun Lee, Yang Hoi Doh, Sangho Shin, Nobuhiko P. Kobayashi

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO₂) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

Original language	English (US)
Pages (from-to)	121-128
Number of pages	8
Journal	Organic Electronics
Volume	17
DOIs	https://doi.org/10.1016/j.orgel.2014.11.028
State	Published - Feb 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2014.11.028

Cite this

@article{798dd4d4d0e6423eb92a0d8f452f3e27,

title = "Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique",

abstract = "By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.",

author = "Shawkat Ali and Jinho Bae and Choi, {Kyung Hyun} and Lee, {Chong Hyun} and Doh, {Yang Hoi} and Sangho Shin and Kobayashi, {Nobuhiko P.}",

year = "2015",

month = feb,

doi = "10.1016/j.orgel.2014.11.028",

language = "English (US)",

volume = "17",

pages = "121--128",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

}

TY - JOUR

T1 - Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

AU - Ali, Shawkat

AU - Bae, Jinho

AU - Choi, Kyung Hyun

AU - Lee, Chong Hyun

AU - Doh, Yang Hoi

AU - Shin, Sangho

AU - Kobayashi, Nobuhiko P.

PY - 2015/2

Y1 - 2015/2

N2 - By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

AB - By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

UR - http://www.scopus.com/inward/record.url?scp=84919778161&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919778161&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.11.028

DO - 10.1016/j.orgel.2014.11.028

M3 - Article

AN - SCOPUS:84919778161

SN - 1566-1199

VL - 17

SP - 121

EP - 128

JO - Organic Electronics

JF - Organic Electronics

ER -

Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this