Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Shawkat Ali, Jinho Bae, Kyung Hyun Choi, Chong Hyun Lee, Yang Hoi Doh, Sangho Shin, Nobuhiko P. Kobayashi

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

Original languageEnglish (US)
Pages (from-to)121-128
Number of pages8
JournalOrganic Electronics
Volume17
DOIs
StatePublished - Feb 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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