TY - JOUR
T1 - Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique
AU - Ali, Shawkat
AU - Bae, Jinho
AU - Choi, Kyung Hyun
AU - Lee, Chong Hyun
AU - Doh, Yang Hoi
AU - Shin, Sangho
AU - Kobayashi, Nobuhiko P.
N1 - Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2013R1A1A4A01011554 ).
PY - 2015/2
Y1 - 2015/2
N2 - By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.
AB - By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.
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U2 - 10.1016/j.orgel.2014.11.028
DO - 10.1016/j.orgel.2014.11.028
M3 - Article
AN - SCOPUS:84919778161
VL - 17
SP - 121
EP - 128
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
ER -