Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Shawkat Ali; Jinho Bae; Kyung Hyun Choi; Chong Hyun Lee; Yang Hoi Doh; Sangho Shin; Nobuhiko P. Kobayashi

doi:10.1016/j.orgel.2014.11.028

Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Shawkat Ali, Jinho Bae, Kyung Hyun Choi, Chong Hyun Lee, Yang Hoi Doh, Sangho Shin, Nobuhiko P. Kobayashi

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO₂) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

Original language	English (US)
Pages (from-to)	121-128
Number of pages	8
Journal	Organic Electronics
Volume	17
DOIs	https://doi.org/10.1016/j.orgel.2014.11.028
State	Published - Feb 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2014.11.028

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title = "Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique",

abstract = "By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.",

author = "Shawkat Ali and Jinho Bae and Choi, {Kyung Hyun} and Lee, {Chong Hyun} and Doh, {Yang Hoi} and Sangho Shin and Kobayashi, {Nobuhiko P.}",

year = "2015",

month = feb,

doi = "10.1016/j.orgel.2014.11.028",

language = "English (US)",

volume = "17",

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journal = "Organic Electronics",

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T1 - Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

AU - Ali, Shawkat

AU - Bae, Jinho

AU - Choi, Kyung Hyun

AU - Lee, Chong Hyun

AU - Doh, Yang Hoi

AU - Shin, Sangho

AU - Kobayashi, Nobuhiko P.

PY - 2015/2

Y1 - 2015/2

N2 - By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

AB - By utilizing electro-hydrodynamic (EHD) technique, we propose an organic non-volatile memory cell capable of storing one bit data. It consists of an organic resistor and a memristor, which stores a bit in the memristor and be read by a voltage divider operation. The proposed device is fabricated by utilizing the materials poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) for resistor and zirconium dioxide (ZrO2) for memristor. The fabricated device is in the size of 4 mm × 2 mm, and thickness of the memristor and the resistor are 76 nm and 1 μm, respectively. To verify the device, reliable read/write operations are presented for more than 100 cycles. The device is also measured a stable performance against bending, and a minimum applicable bending diameter is 12 mm. The device is analyzed for surface morphology by taking SEM images.

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SP - 121

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JO - Organic Electronics

JF - Organic Electronics

ER -

Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique

Abstract

All Science Journal Classification (ASJC) codes

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