Neuronal spike event generation by memristors

Sangho Shin, Davide Sacchetto, Yusuf Leblebici, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO2/Pt memristive device having the ROFF/RON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.

Original languageEnglish (US)
Title of host publication2012 13th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2012
DOIs
StatePublished - Dec 13 2012
Externally publishedYes
Event2012 13th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2012 - Turin, Italy
Duration: Aug 29 2012Aug 29 2012

Publication series

NameInternational Workshop on Cellular Nanoscale Networks and their Applications
ISSN (Print)2165-0160
ISSN (Electronic)2165-0179

Other

Other2012 13th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2012
Country/TerritoryItaly
CityTurin
Period8/29/128/29/12

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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