TY - JOUR
T1 - Metal-insulator transitions in reduced molybdenum oxides Sm4Mo18O32 and Nd4Mo18O32
AU - Lofland, S. E.
AU - Tyagi, S.
AU - Hettinger, J. D.
AU - McCarroll, W. H.
AU - Ramanujachary, K. V.
AU - Gall, P.
AU - Gougeon, P.
N1 - Funding Information:
SEL acknowledges support from NSF MRSEC DMR 0520471 and DMR 0603644. KVR acknowledges the support from Rowan University in the form of adjusted load for carrying out portions of this research.
PY - 2007/7/3
Y1 - 2007/7/3
N2 - Synthesis, structure and electronic properties are reported on single crystals of Sm4Mo18O32 and Nd4Mo18O32. The triclinic crystal structure has three distinctly different Mo metal atom clusters (Mo2, Mo4 and Mo6), which extend in complex chains. The temperature dependence of the electrical resistivity displays a broad minimum around 150-200 K with a pronounced increase in the 30-50 K range. However, unlike the related monoclinic reduced Mo oxides, A4Mo18O32 (A = Y, Gd-Yb), there is no true metal-insulator transition in the Sm and Nd analogs. We discuss these observations in terms of correlations among the Mo clusters.
AB - Synthesis, structure and electronic properties are reported on single crystals of Sm4Mo18O32 and Nd4Mo18O32. The triclinic crystal structure has three distinctly different Mo metal atom clusters (Mo2, Mo4 and Mo6), which extend in complex chains. The temperature dependence of the electrical resistivity displays a broad minimum around 150-200 K with a pronounced increase in the 30-50 K range. However, unlike the related monoclinic reduced Mo oxides, A4Mo18O32 (A = Y, Gd-Yb), there is no true metal-insulator transition in the Sm and Nd analogs. We discuss these observations in terms of correlations among the Mo clusters.
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U2 - 10.1016/j.materresbull.2006.10.018
DO - 10.1016/j.materresbull.2006.10.018
M3 - Article
AN - SCOPUS:34247538563
SN - 0025-5408
VL - 42
SP - 1230
EP - 1241
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 7
ER -