Memristors-based Ternary Content Addressable Memory (mTCAM)

Le Zheng, Sangho Shin, Sung Mo Steve Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations


A memristors-based Ternary Content Addressable Memory (mTCAM) is presented. A unit mTCAM cell consists of 5T2R, five transistors and two memristors to store the ternary information, having higher storage density than conventional CMOS TCAMs together with the memristors' unique non-volatility. In the write mode, each memristor in the cell is programmed individually such that high impedance is always present between searchlines to reduce the direct current. A two-step write scheme is proposed to reduce the write voltage compliance, and the search voltage used to drive the search content was chosen to optimize the sensing margin. Simulation results for a 2×4 mTCAM array demonstrate the functionality and feasibility of the proposed mTCAM structure, in both write and search modes.

Original languageEnglish (US)
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)9781479934324
StatePublished - 2014
Externally publishedYes
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310


Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
CityMelbourne, VIC

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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