Memristor macromodel and its application to neuronal spike generation

Sangho Shin, Kyungmin Kim, Sung Mo Steve Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper introduces a memristor-based neuronal spike event generator, in which the memristor models the nonlinear behavior of opening and closing of sodium and potassium ion channels. The neuronal action potential describing both the integrate-and-fire spiking events and the refractory period of nerve membrane cells is enabled by utilizing dual time-constants offered by the bistable resistance state of practical memristive devices. A memristor macromodel which is capable of representing both the threshold effects and boundary assurance is also presented.

Original languageEnglish (US)
Title of host publication2013 European Conference on Circuit Theory and Design, ECCTD 2013 - Proceedings
PublisherIEEE Computer Society
ISBN (Print)9783000437854
DOIs
StatePublished - Jan 1 2013
Event2013 European Conference on Circuit Theory and Design, ECCTD 2013 - Dresden, Germany
Duration: Sep 8 2013Sep 12 2013

Publication series

Name2013 European Conference on Circuit Theory and Design, ECCTD 2013 - Proceedings

Other

Other2013 European Conference on Circuit Theory and Design, ECCTD 2013
CountryGermany
CityDresden
Period9/8/139/12/13

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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    Shin, S., Kim, K., & Kang, S. M. S. (2013). Memristor macromodel and its application to neuronal spike generation. In 2013 European Conference on Circuit Theory and Design, ECCTD 2013 - Proceedings [6662306] (2013 European Conference on Circuit Theory and Design, ECCTD 2013 - Proceedings). IEEE Computer Society. https://doi.org/10.1109/ecctd.2013.6662306