A memristor-based ternary content addressable memory (mTCAM) is presented. Each mTCAM cell, consisting of five transistors and two memristors to store and search for ternary data, is capable of remarkable nonvolatility and higher storage density than conventional CMOS-based TCAMs. Each memristor in the cell can be programmed individually such that high impedance is always present between searchlines to reduce static energy consumption. A unique two-step write scheme offers reliable and energy-efficient write operations. The search voltage is designed to ensure optimum sensing margins with the presence of variations in memristor devices. Simulations of the proposed mTCAM demonstrate functionalities in write and search modes, as well as a search delay of 2 ns and a search of 0.99 fJ/bit/search for a word width of 128 bits.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry