TY - GEN
T1 - Mechanical fabrication of graphene devices using focused-ion beam
T2 - Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
AU - Lei, Nan
AU - Chen, Zheyuan
AU - Kim, Dave
AU - Xue, Wei
AU - Xu, Jie
PY - 2012
Y1 - 2012
N2 - Graphene, due to its material stability, mechanical strength, unique band structure and excellent electrical properties, holds great promise for future nanoscale electronic devices. Here, we report a novel mechanical fast-prototyping method to fabricate graphene-based electronic structures on few-layer graphene (FLG) using focused-ion beam (FIB). FIB is a versatile tool and FIB-assisted deposition and milling processes feature mask-free patterning, quick turnaround time as well as high precision. Specifically, in this study, the parameters of FIB are well controlled. The platinum wire, which is induced from the gaseous precursors by the fine focused gallium ions of low energy, is conveniently deposited on the substrate to connect FLG. The measured channel resistance of around 50 kΩ indicates good electrical contact between platinum wire and FLG. With the computer controlled alignment and patterning, the accuracy of deposition and milling can be as high as 15-20 nm. For the milling process, 2-D ribbon structures can be easily produced by milling the patterned area, followed by an annealing process. Raman spectra are used to examine the quality of graphene after the FIB and annealing processes.
AB - Graphene, due to its material stability, mechanical strength, unique band structure and excellent electrical properties, holds great promise for future nanoscale electronic devices. Here, we report a novel mechanical fast-prototyping method to fabricate graphene-based electronic structures on few-layer graphene (FLG) using focused-ion beam (FIB). FIB is a versatile tool and FIB-assisted deposition and milling processes feature mask-free patterning, quick turnaround time as well as high precision. Specifically, in this study, the parameters of FIB are well controlled. The platinum wire, which is induced from the gaseous precursors by the fine focused gallium ions of low energy, is conveniently deposited on the substrate to connect FLG. The measured channel resistance of around 50 kΩ indicates good electrical contact between platinum wire and FLG. With the computer controlled alignment and patterning, the accuracy of deposition and milling can be as high as 15-20 nm. For the milling process, 2-D ribbon structures can be easily produced by milling the patterned area, followed by an annealing process. Raman spectra are used to examine the quality of graphene after the FIB and annealing processes.
UR - http://www.scopus.com/inward/record.url?scp=84864926288&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864926288&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84864926288
SN - 9781466562752
T3 - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
SP - 502
EP - 505
BT - Nanotechnology 2012
Y2 - 18 June 2012 through 21 June 2012
ER -