TY - JOUR
T1 - Material characteristics of perovskite manganese oxide thin films for bolometric applications
AU - Goyal, A.
AU - Rajeswari, M.
AU - Shreekala, R.
AU - Lofland, S. E.
AU - Bhagat, S. M.
AU - Boettcher, T.
AU - Kwon, C.
AU - Ramesh, R.
AU - Venkatesan, T.
PY - 1997/10/27
Y1 - 1997/10/27
N2 - We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (Tp) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as Tp, increases.
AB - We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (Tp) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as Tp, increases.
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U2 - 10.1063/1.120427
DO - 10.1063/1.120427
M3 - Article
AN - SCOPUS:3543105338
SN - 0003-6951
VL - 71
SP - 2535
EP - 2537
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 17
ER -