A laser direct writing technique for forming insulating layers of silicon dioxide from an organosilicate film on various substrate materials is shown. The process resolution is a function of the thermal properties of the substrate and is shown to be 1 mu m. The technique allows for a local variation in the oxide thickness by changing process parameters. The quality of the laser written layers is compared to similar films formed by conventional organosilicate processing.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - Oct 1984
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering