MASKLESS LASER WRITING OF SILICON DIOXIDE.

Robert Krchnavek, H. H. Gilgen, R. M. Osgood

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A laser direct writing technique for forming insulating layers of silicon dioxide from an organosilicate film on various substrate materials is shown. The process resolution is a function of the thermal properties of the substrate and is shown to be 1 mu m. The technique allows for a local variation in the oxide thickness by changing process parameters. The quality of the laser written layers is compared to similar films formed by conventional organosilicate processing.

Original languageEnglish (US)
Pages (from-to)641-644
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number4
DOIs
StatePublished - Oct 1 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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