Magnetotransport properties of the ternary carbide Ti3SiC2: Hall effect, magnetoresistance, and magnetic susceptibility

P. Finkel; J. D. Hettinger; S. E. Lofland; M. W. Barsoum; T. El-Raghy

Magnetotransport properties of the ternary carbide Ti₃SiC₂: Hall effect, magnetoresistance, and magnetic susceptibility

P. Finkel, J. D. Hettinger, S. E. Lofland, M. W. Barsoum, T. El-Raghy

Physics

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30 Scopus citations

Abstract

In this study we report on the transport properties of the Ti-based ternary carbide Ti₃SiC₂. The Hall effect and longitudinal magnetoresistance have been measured as a function of temperature in the 4-300 K range and at magnetic fields up to 5 T. The magnetoresistance is dominated by a positive quadratic field dependence at low temperatures. The Hall voltage is a linear function of magnetic field over the range of temperatures investigated. The effective carrier concentration and mobilities were calculated based on the sign and value of the Hall coefficient. These results are discussed in terms of a two-band model and compared to the single-band approximation. The magnetic susceptibility (4.1 × 10^-6) was found to be independent of temperature and field. These results were used to evaluate the charge concentration in light of Pauli paramaganetism theory.

Original language	English (US)
Article number	035113
Pages (from-to)	351131-351134
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	3
State	Published - Jan 15 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Magnetotransport properties of the ternary carbide Ti3SiC2: Hall effect, magnetoresistance, and magnetic susceptibility",

abstract = "In this study we report on the transport properties of the Ti-based ternary carbide Ti3SiC2. The Hall effect and longitudinal magnetoresistance have been measured as a function of temperature in the 4-300 K range and at magnetic fields up to 5 T. The magnetoresistance is dominated by a positive quadratic field dependence at low temperatures. The Hall voltage is a linear function of magnetic field over the range of temperatures investigated. The effective carrier concentration and mobilities were calculated based on the sign and value of the Hall coefficient. These results are discussed in terms of a two-band model and compared to the single-band approximation. The magnetic susceptibility (4.1 × 10-6) was found to be independent of temperature and field. These results were used to evaluate the charge concentration in light of Pauli paramaganetism theory.",

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T1 - Magnetotransport properties of the ternary carbide Ti3SiC2

T2 - Hall effect, magnetoresistance, and magnetic susceptibility

AU - Finkel, P.

AU - Hettinger, J. D.

AU - Lofland, S. E.

AU - Barsoum, M. W.

AU - El-Raghy, T.

PY - 2002/1/15

Y1 - 2002/1/15

N2 - In this study we report on the transport properties of the Ti-based ternary carbide Ti3SiC2. The Hall effect and longitudinal magnetoresistance have been measured as a function of temperature in the 4-300 K range and at magnetic fields up to 5 T. The magnetoresistance is dominated by a positive quadratic field dependence at low temperatures. The Hall voltage is a linear function of magnetic field over the range of temperatures investigated. The effective carrier concentration and mobilities were calculated based on the sign and value of the Hall coefficient. These results are discussed in terms of a two-band model and compared to the single-band approximation. The magnetic susceptibility (4.1 × 10-6) was found to be independent of temperature and field. These results were used to evaluate the charge concentration in light of Pauli paramaganetism theory.

AB - In this study we report on the transport properties of the Ti-based ternary carbide Ti3SiC2. The Hall effect and longitudinal magnetoresistance have been measured as a function of temperature in the 4-300 K range and at magnetic fields up to 5 T. The magnetoresistance is dominated by a positive quadratic field dependence at low temperatures. The Hall voltage is a linear function of magnetic field over the range of temperatures investigated. The effective carrier concentration and mobilities were calculated based on the sign and value of the Hall coefficient. These results are discussed in terms of a two-band model and compared to the single-band approximation. The magnetic susceptibility (4.1 × 10-6) was found to be independent of temperature and field. These results were used to evaluate the charge concentration in light of Pauli paramaganetism theory.

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Magnetotransport properties of the ternary carbide Ti₃SiC₂: Hall effect, magnetoresistance, and magnetic susceptibility

Abstract

All Science Journal Classification (ASJC) codes

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