Abstract
The magnetic response of microdevices is significantly enhanced at structural resonance allowing for improved sensitivity and signal-to-noise ratio. Here, free-standing thin film CoFe bridge resonators have been fabricated and investigated. It is shown that the strong magnetic field dependence of the fundamental resonance frequency is a function of magnetic field orientation due to stress-induced anisotropy. These devices may offer a new approach for developing fully integrated resonant magnetic field sensing technology.
| Original language | English (US) |
|---|---|
| Article number | 072408 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 7 |
| DOIs | |
| State | Published - Feb 17 2014 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)