LASER DIRECT WRITING OF METAL INTERCONNECTS.

T. Cacouris, R. R. Krchnavek, H. H. Gilgen, R. M. Osgood, S. Kulick, J. Schoen

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Laser direct writing of metals offers the advantages of in-situ design and repair of ICs with a process that can be controlled and altered from chip to chip to meet the designer's needs. A summary of laser direct writing techniques for metal deposition--photolytic, pyrolytic, and photo-thermal--is presented, emphasizing the advantages of each technique. In particular, the authors have sought to produce high-quality metal interconnects suitable for VLSI dimensions of 2-3 mu m linewidths, yet with resistivities 3-5 times the bulk metal used. An important aspect of the study involved penetration of the native oxide layer that exists on evaporated Al metallizations in order to make low-resistivity interconnect lines.

Original languageEnglish (US)
Pages (from-to)594-597
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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