Abstract
Laser direct writing of metals offers the advantages of in-situ design and repair of ICs with a process that can be controlled and altered from chip to chip to meet the designer's needs. A summary of laser direct writing techniques for metal deposition--photolytic, pyrolytic, and photo-thermal--is presented, emphasizing the advantages of each technique. In particular, the authors have sought to produce high-quality metal interconnects suitable for VLSI dimensions of 2-3 mu m linewidths, yet with resistivities 3-5 times the bulk metal used. An important aspect of the study involved penetration of the native oxide layer that exists on evaporated Al metallizations in order to make low-resistivity interconnect lines.
Original language | English (US) |
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Pages (from-to) | 594-597 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry