Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

Darshan C. Kundaliya; S. B. Ogale; S. Dhar; K. F. McDonald; E. Knoesel; T. Osedach; S. E. Lofland; S. R. Shinde; T. Venkatesan

doi:10.1016/j.jmmm.2005.04.017

Large second-harmonic kerr rotation in GaFeO₃ thin films on YSZ buffered silicon

Darshan C. Kundaliya, S. B. Ogale, S. Dhar, K. F. McDonald, E. Knoesel, T. Osedach, S. E. Lofland, S. R. Shinde, T. Venkatesan

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Epitaxial thin films of gallium iron oxide (GaFeO₃) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO₃ on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

Original language	English (US)
Pages (from-to)	307-311
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	299
Issue number	2
DOIs	https://doi.org/10.1016/j.jmmm.2005.04.017
State	Published - Apr 1 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon",

abstract = "Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.",

author = "Kundaliya, {Darshan C.} and Ogale, {S. B.} and S. Dhar and McDonald, {K. F.} and E. Knoesel and T. Osedach and Lofland, {S. E.} and Shinde, {S. R.} and T. Venkatesan",

year = "2006",

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doi = "10.1016/j.jmmm.2005.04.017",

language = "English (US)",

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journal = "Journal of Magnetism and Magnetic Materials",

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Large second-harmonic kerr rotation in GaFeO₃ thin films on YSZ buffered silicon. / Kundaliya, Darshan C.; Ogale, S. B.; Dhar, S.; McDonald, K. F.; Knoesel, E.; Osedach, T.; Lofland, S. E.; Shinde, S. R.; Venkatesan, T.

In: Journal of Magnetism and Magnetic Materials, Vol. 299, No. 2, 01.04.2006, p. 307-311.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

AU - Kundaliya, Darshan C.

AU - Ogale, S. B.

AU - Dhar, S.

AU - McDonald, K. F.

AU - Knoesel, E.

AU - Osedach, T.

AU - Lofland, S. E.

AU - Shinde, S. R.

AU - Venkatesan, T.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

AB - Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

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EP - 311

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

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