Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

Darshan C. Kundaliya, S. B. Ogale, S. Dhar, K. F. McDonald, E. Knoesel, T. Osedach, S. E. Lofland, S. R. Shinde, T. Venkatesan

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15 Scopus citations


Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

Original languageEnglish (US)
Pages (from-to)307-311
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Issue number2
StatePublished - Apr 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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