Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

Darshan C. Kundaliya; S. B. Ogale; S. Dhar; K. F. McDonald; E. Knoesel; T. Osedach; S. E. Lofland; S. R. Shinde; T. Venkatesan

doi:10.1016/j.jmmm.2005.04.017

Large second-harmonic kerr rotation in GaFeO₃ thin films on YSZ buffered silicon

Darshan C. Kundaliya, S. B. Ogale, S. Dhar, K. F. McDonald, E. Knoesel, T. Osedach, S. E. Lofland, S. R. Shinde, T. Venkatesan

Physics

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16 Scopus citations

Abstract

Epitaxial thin films of gallium iron oxide (GaFeO₃) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO₃ on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

Original language	English (US)
Pages (from-to)	307-311
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	299
Issue number	2
DOIs	https://doi.org/10.1016/j.jmmm.2005.04.017
State	Published - Apr 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2005.04.017

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@article{ec0fee8e4c7e449aa5e0cbe9210da9d7,

title = "Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon",

abstract = "Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.",

author = "Kundaliya, {Darshan C.} and Ogale, {S. B.} and S. Dhar and McDonald, {K. F.} and E. Knoesel and T. Osedach and Lofland, {S. E.} and Shinde, {S. R.} and T. Venkatesan",

note = "Funding Information: We acknowledge support under MRSEC Grant DMR 00-80008. The Rutherford backscattering ion channeling work reported here is done on pelletron shared experimental facility (SEF) supported also under the NSF-MRSEC grant.",

year = "2006",

month = apr,

doi = "10.1016/j.jmmm.2005.04.017",

language = "English (US)",

volume = "299",

pages = "307--311",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

AU - Kundaliya, Darshan C.

AU - Ogale, S. B.

AU - Dhar, S.

AU - McDonald, K. F.

AU - Knoesel, E.

AU - Osedach, T.

AU - Lofland, S. E.

AU - Shinde, S. R.

AU - Venkatesan, T.

N1 - Funding Information: We acknowledge support under MRSEC Grant DMR 00-80008. The Rutherford backscattering ion channeling work reported here is done on pelletron shared experimental facility (SEF) supported also under the NSF-MRSEC grant.

PY - 2006/4

Y1 - 2006/4

N2 - Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

AB - Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (TC∼215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ∼15° in the ferromagnetic state.

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UR - http://www.scopus.com/inward/citedby.url?scp=27844550225&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2005.04.017

DO - 10.1016/j.jmmm.2005.04.017

M3 - Article

AN - SCOPUS:27844550225

VL - 299

SP - 307

EP - 311

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2

ER -

Large second-harmonic kerr rotation in GaFeO₃ thin films on YSZ buffered silicon

Abstract

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