Improvement in spin-wave resonance characteristics of epitaxial barium-ferrite thin films by using an aluminum-doped strontium-ferrite buffer layer

S. R. Shinde, S. E. Lofland, C. S. Ganpule, S. M. Bhagat, S. B. Ogale, R. Ramesh, T. Venkatesan

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Abstract

We report on the effects of using SrFe7Al5O19 as a buffer layer for growth of high-quality epitaxial barium-ferrite thin films on sapphire substrates. X-ray diffraction studies reveal that the buffer layer causes the interfacial strains in the barium-ferrite films to relax. As a result, the ferromagnetic resonance linewidth decreases even in the as-deposited case. However, the more striking result is the drastic reduction in the linewidth that occurs when the barium-ferrite film is deposited on the buffer layer and subsequently annealed at 1000°C for 2 h, allowing the observation of a large number of spin-wave resonances (up to the 15th mode), indicating an improvement in both the surface and interface characteristics.

Original languageEnglish (US)
Pages (from-to)594-596
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number4
DOIs
StatePublished - Jan 25 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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