Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

K. K.S. Lau; H. G. Pryce Lewis; S. J. Limb; M. C. Kwan; K. K. Gleason

doi:10.1016/S0040-6090(01)01287-1

Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

K. K.S. Lau
, H. G. Pryce Lewis
, S. J. Limb
, M. C. Kwan
, K. K. Gleason

Research output: Contribution to journal › Conference article › peer-review

63 Scopus citations

Abstract

HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C₃F₆O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon™). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D₄) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).

Original language	English (US)
Pages (from-to)	288-291
Number of pages	4
Journal	Thin Solid Films
Volume	395
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)01287-1
State	Published - Sep 3 2001
Externally published	Yes
Event	Proceedings of the First International Conference on Cat-CVD - Kanazawa, Japan Duration: Nov 14 2000 → Nov 17 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(01)01287-1

Cite this

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title = "Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films",

abstract = "HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon{\texttrademark}). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D4) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).",

author = "Lau, \{K. K.S.\} and \{Pryce Lewis\}, \{H. G.\} and Limb, \{S. J.\} and Kwan, \{M. C.\} and Gleason, \{K. K.\}",

note = "Funding Information: We gratefully acknowledge the NIH (Contract N01-NS-3-2301), NSF (CTS-9057119) and the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing for funding this work. This work made use of MRSEC Shared Facilities supported by the NSF (DMR-9400334). ; Proceedings of the First International Conference on Cat-CVD ; Conference date: 14-11-2000 Through 17-11-2000",

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doi = "10.1016/S0040-6090(01)01287-1",

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AU - Lau, K. K.S.

AU - Pryce Lewis, H. G.

AU - Limb, S. J.

AU - Kwan, M. C.

AU - Gleason, K. K.

N1 - Funding Information: We gratefully acknowledge the NIH (Contract N01-NS-3-2301), NSF (CTS-9057119) and the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing for funding this work. This work made use of MRSEC Shared Facilities supported by the NSF (DMR-9400334).

PY - 2001/9/3

Y1 - 2001/9/3

N2 - HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon™). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D4) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).

AB - HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon™). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D4) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).

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U2 - 10.1016/S0040-6090(01)01287-1

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ER -

Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

Abstract

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