TY - JOUR
T1 - Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films
AU - Lau, K. K.S.
AU - Pryce Lewis, H. G.
AU - Limb, S. J.
AU - Kwan, M. C.
AU - Gleason, K. K.
N1 - Funding Information:
We gratefully acknowledge the NIH (Contract N01-NS-3-2301), NSF (CTS-9057119) and the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing for funding this work. This work made use of MRSEC Shared Facilities supported by the NSF (DMR-9400334).
PY - 2001/9/3
Y1 - 2001/9/3
N2 - HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon™). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D4) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).
AB - HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon™). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D4) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).
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U2 - 10.1016/S0040-6090(01)01287-1
DO - 10.1016/S0040-6090(01)01287-1
M3 - Conference article
AN - SCOPUS:0035801163
SN - 0040-6090
VL - 395
SP - 288
EP - 291
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the First International Conference on Cat-CVD
Y2 - 14 November 2000 through 17 November 2000
ER -