Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

K. K.S. Lau, H. G. Pryce Lewis, S. J. Limb, M. C. Kwan, K. K. Gleason

Research output: Contribution to journalConference articlepeer-review

58 Scopus citations

Abstract

HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists, directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon™). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D4) at extremely high rates (>2 μm/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly(dimethysiloxane) (PDMS).

Original languageEnglish (US)
Pages (from-to)288-291
Number of pages4
JournalThin Solid Films
Volume395
Issue number1-2
DOIs
StatePublished - Sep 3 2001
Externally publishedYes
EventProceedings of the First International Conference on Cat-CVD - Kanazawa, Japan
Duration: Nov 14 2000Nov 17 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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