TY - GEN
T1 - High-yield dielectrophoretic deposition and ion sensitivity of graphene
AU - Li, Pengfei
AU - Lei, Nan
AU - Xu, Jie
AU - Xue, Wei
PY - 2011
Y1 - 2011
N2 - Here we report a simple but effective approach to deposit graphene on silicon with dielectrophoresis. With a comb-shaped electrode design, graphene sheets can be captured between electrode pairs. The dielectrophoresis has proven effective in depositing a large-scale array of graphene sheets on desired locations. The dielectrophoretically deposited graphene demonstrates high sensitivity towards hydrogen ion concentration in an aqueous environment. The resistance of graphene is inversely proportional to the pH value of the solutions in the range of 5 to 9. The pH sensitivity of graphene is caused by the electrolyte-dependent gating effects and the creation of an electrical double layer at the liquid-graphene interface. The high-precision, high-yield dielectrophoretic deposition method provides an effective approach for large-scale fabrication and integration of future graphene-based nanoelectronic devices.
AB - Here we report a simple but effective approach to deposit graphene on silicon with dielectrophoresis. With a comb-shaped electrode design, graphene sheets can be captured between electrode pairs. The dielectrophoresis has proven effective in depositing a large-scale array of graphene sheets on desired locations. The dielectrophoretically deposited graphene demonstrates high sensitivity towards hydrogen ion concentration in an aqueous environment. The resistance of graphene is inversely proportional to the pH value of the solutions in the range of 5 to 9. The pH sensitivity of graphene is caused by the electrolyte-dependent gating effects and the creation of an electrical double layer at the liquid-graphene interface. The high-precision, high-yield dielectrophoretic deposition method provides an effective approach for large-scale fabrication and integration of future graphene-based nanoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84858971895&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84858971895&partnerID=8YFLogxK
U2 - 10.1109/NANO.2011.6144331
DO - 10.1109/NANO.2011.6144331
M3 - Conference contribution
AN - SCOPUS:84858971895
SN - 9781457715143
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 1327
EP - 1330
BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Y2 - 15 August 2011 through 19 August 2011
ER -