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High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO
2
nanoparticle dielectric layer
Wei Xue
, Yi Liu, Tianhong Cui
Research output
:
Contribution to journal
›
Article
›
peer-review
55
Scopus citations
Overview
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Dive into the research topics of 'High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO
2
nanoparticle dielectric layer'. Together they form a unique fingerprint.
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Material Science
Dielectric Material
100%
Silica Nanoparticle
100%
Carbon Nanotube
100%
Transistor
100%
Thin-Film Transistor
75%
Nanoparticle
25%
Self Assembly
25%
Semiconducting Material
25%
Hole Mobility
25%
Keyphrases
Semiconducting Layer
100%
High Electron Mobility Transistor
100%
Effective Thickness
66%
Semiconductor Characteristic
33%
Channel Length
33%
Semiconductor Layer
33%
Accumulation Mode
33%
Gate Dielectric Material
33%
Transistor Device
33%
Transconductance
33%
Engineering
Dielectric Layer
100%
Channel Length
33%
Gate Dielectric
33%