Growth and structural properties of Bi(FexSc1-x)O3 thin films

M. Murakami; M. A. Aronova; M. Wuttig; I. Takeuchi; S. Trolier-Mckinstry; K. McDonald; E. Knoesel; S. E. Lofland; T. Chikyow; T. Aoyama; K. Nakajima

doi:10.1080/09500830601175504

Growth and structural properties of Bi(FexSc1-x)O3 thin films

M. Murakami, M. A. Aronova, M. Wuttig, I. Takeuchi, S. Trolier-Mckinstry, K. McDonald, E. Knoesel, S. E. Lofland, T. Chikyow, T. Aoyama, K. Nakajima

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Epitaxial Bi(FexSc1-x)O3 thin films with a range of compositions were fabricated by pulsed laser deposition on SrTiO3 (001) substrates with a BiFeO3 buffer layer. X-ray diffraction and transmission electron microscopy reveal that this composition series forms a solid solution in the thin film form. Second harmonic generation measurements showed a maximum at x = 0.7, which may be associated with a phase transition. The present BiScO3 films did not exhibit ferroelectric or antiferroelectric behaviour at the field levels which could be probed.

Original language	English (US)
Pages (from-to)	241-247
Number of pages	7
Journal	Philosophical Magazine Letters
Volume	87
Issue number	3-4
DOIs	https://doi.org/10.1080/09500830601175504
State	Published - Mar 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1080/09500830601175504

Cite this

@article{64421cfa48c44f1fa898eab815ebe996,

title = "Growth and structural properties of Bi(FexSc1-x)O3 thin films",

abstract = "Epitaxial Bi(FexSc1-x)O3 thin films with a range of compositions were fabricated by pulsed laser deposition on SrTiO3 (001) substrates with a BiFeO3 buffer layer. X-ray diffraction and transmission electron microscopy reveal that this composition series forms a solid solution in the thin film form. Second harmonic generation measurements showed a maximum at x = 0.7, which may be associated with a phase transition. The present BiScO3 films did not exhibit ferroelectric or antiferroelectric behaviour at the field levels which could be probed.",

author = "M. Murakami and Aronova, {M. A.} and M. Wuttig and I. Takeuchi and S. Trolier-Mckinstry and K. McDonald and E. Knoesel and Lofland, {S. E.} and T. Chikyow and T. Aoyama and K. Nakajima",

note = "Funding Information: We acknowledge useful discussions with Dr. Y. Horibe concerning the TEM results. This work was supported by NSF DMR 0094265 (CAREER), NSF DMR 0231291, MRSEC 0520471 and ONR N000140110761 and N000140410085.",

year = "2007",

month = mar,

doi = "10.1080/09500830601175504",

language = "English (US)",

volume = "87",

pages = "241--247",

journal = "Philosophical Magazine Letters",

issn = "0950-0839",

publisher = "Taylor and Francis Ltd.",

number = "3-4",

}

TY - JOUR

T1 - Growth and structural properties of Bi(FexSc1-x)O3 thin films

AU - Murakami, M.

AU - Aronova, M. A.

AU - Wuttig, M.

AU - Takeuchi, I.

AU - Trolier-Mckinstry, S.

AU - McDonald, K.

AU - Knoesel, E.

AU - Lofland, S. E.

AU - Chikyow, T.

AU - Aoyama, T.

AU - Nakajima, K.

N1 - Funding Information: We acknowledge useful discussions with Dr. Y. Horibe concerning the TEM results. This work was supported by NSF DMR 0094265 (CAREER), NSF DMR 0231291, MRSEC 0520471 and ONR N000140110761 and N000140410085.

PY - 2007/3

Y1 - 2007/3

N2 - Epitaxial Bi(FexSc1-x)O3 thin films with a range of compositions were fabricated by pulsed laser deposition on SrTiO3 (001) substrates with a BiFeO3 buffer layer. X-ray diffraction and transmission electron microscopy reveal that this composition series forms a solid solution in the thin film form. Second harmonic generation measurements showed a maximum at x = 0.7, which may be associated with a phase transition. The present BiScO3 films did not exhibit ferroelectric or antiferroelectric behaviour at the field levels which could be probed.

AB - Epitaxial Bi(FexSc1-x)O3 thin films with a range of compositions were fabricated by pulsed laser deposition on SrTiO3 (001) substrates with a BiFeO3 buffer layer. X-ray diffraction and transmission electron microscopy reveal that this composition series forms a solid solution in the thin film form. Second harmonic generation measurements showed a maximum at x = 0.7, which may be associated with a phase transition. The present BiScO3 films did not exhibit ferroelectric or antiferroelectric behaviour at the field levels which could be probed.

UR - http://www.scopus.com/inward/record.url?scp=33947653153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947653153&partnerID=8YFLogxK

U2 - 10.1080/09500830601175504

DO - 10.1080/09500830601175504

M3 - Article

AN - SCOPUS:33947653153

SN - 0950-0839

VL - 87

SP - 241

EP - 247

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

IS - 3-4

ER -

Growth and structural properties of Bi(FexSc1-x)O3 thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this