Growth and properties of La2-xSrxCuO4 films

I. E. Trofimov; L. A. Johnson; K. V. Ramanujachary; S. Guha; M. G. Harrison; M. Greenblatt; M. Z. Cieplak; P. Lindenfeld

doi:10.1063/1.112671

Growth and properties of La_2-xSr_xCuO₄ films

I. E. Trofimov, L. A. Johnson, K. V. Ramanujachary, S. Guha, M. G. Harrison, M. Greenblatt, M. Z. Cieplak, P. Lindenfeld

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Single-crystalline films of La_2-xSr_xCuO₄ have been grown epitaxially on SrTiO₃, NdGaO₃, and LaSrAlO₄ substrates by laser ablation. We show that record values of the superconducting transition temperature may be achieved by high-pressure annealing in oxygen. The films exhibit values of T_co above 38 K, as well as a linear variation of the resistivity with T and excellent crystal quality.

Original language	English (US)
Pages (from-to)	2481-2483
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	19
DOIs	https://doi.org/10.1063/1.112671
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.112671

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abstract = "Single-crystalline films of La2-xSrxCuO4 have been grown epitaxially on SrTiO3, NdGaO3, and LaSrAlO4 substrates by laser ablation. We show that record values of the superconducting transition temperature may be achieved by high-pressure annealing in oxygen. The films exhibit values of Tco above 38 K, as well as a linear variation of the resistivity with T and excellent crystal quality.",

author = "Trofimov, {I. E.} and Johnson, {L. A.} and Ramanujachary, {K. V.} and S. Guha and Harrison, {M. G.} and M. Greenblatt and Cieplak, {M. Z.} and P. Lindenfeld",

year = "1994",

doi = "10.1063/1.112671",

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volume = "65",

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journal = "Applied Physics Letters",

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T1 - Growth and properties of La2-xSrxCuO4 films

AU - Trofimov, I. E.

AU - Johnson, L. A.

AU - Ramanujachary, K. V.

AU - Guha, S.

AU - Harrison, M. G.

AU - Greenblatt, M.

AU - Cieplak, M. Z.

AU - Lindenfeld, P.

PY - 1994

Y1 - 1994

N2 - Single-crystalline films of La2-xSrxCuO4 have been grown epitaxially on SrTiO3, NdGaO3, and LaSrAlO4 substrates by laser ablation. We show that record values of the superconducting transition temperature may be achieved by high-pressure annealing in oxygen. The films exhibit values of Tco above 38 K, as well as a linear variation of the resistivity with T and excellent crystal quality.

AB - Single-crystalline films of La2-xSrxCuO4 have been grown epitaxially on SrTiO3, NdGaO3, and LaSrAlO4 substrates by laser ablation. We show that record values of the superconducting transition temperature may be achieved by high-pressure annealing in oxygen. The films exhibit values of Tco above 38 K, as well as a linear variation of the resistivity with T and excellent crystal quality.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Growth and properties of La_2-xSr_xCuO₄ films

Abstract

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