Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films

G. C. Xiong; Q. Li; H. L. Ju; S. M. Bhagat; S. E. Lofland; R. L. Greene; T. Venkatesan

doi:10.1063/1.115444

Giant magnetoresistive memory effect in Nd_0.7Sr _0.3MnO_z films

G. C. Xiong, Q. Li, H. L. Ju, S. M. Bhagat, S. E. Lofland, R. L. Greene, T. Venkatesan

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55 Scopus citations

Abstract

A novel giant magnetoresistance memory effect has been observed in epitaxial Nd_0.7Sr_0.3MnO_z thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature T_p, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero" field state is not recovered until the sample is warmed to T∼T_p. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.

Original language	English (US)
Pages (from-to)	3031
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115444
State	Published - 1995
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115444

Cite this

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title = "Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films",

abstract = "A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original {"}zero{"} field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.",

author = "Xiong, {G. C.} and Q. Li and Ju, {H. L.} and Bhagat, {S. M.} and Lofland, {S. E.} and Greene, {R. L.} and T. Venkatesan",

year = "1995",

doi = "10.1063/1.115444",

language = "English (US)",

volume = "67",

pages = "3031",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Giant magnetoresistive memory effect in Nd0.7Sr 0.3MnOz films

AU - Xiong, G. C.

AU - Li, Q.

AU - Ju, H. L.

AU - Bhagat, S. M.

AU - Lofland, S. E.

AU - Greene, R. L.

AU - Venkatesan, T.

PY - 1995

Y1 - 1995

N2 - A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero" field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.

AB - A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin films which have previously been found to exhibit a linear increase in conductivity on first application of magnetic field B. The resistivity of the films depends not only on the instantaneous applied field but also on the magnetic history of the sample. At T well below the temperature Tp, where the zero-field resistivity has a peak, the film enters a high-conductivity state (upon application of a magnetic field) which persists even when B is reduced to zero. The original "zero" field state is not recovered until the sample is warmed to T∼Tp. Surprisingly, the dc magnetization exhibits only a weak irreversibility while the magnetoconductivity is markedly hysteretic. A possible explanation is proposed.

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Giant magnetoresistive memory effect in Nd_0.7Sr _0.3MnO_z films

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