Fluorocarbon dielectrics via hot filament chemical vapor deposition

Kenneth K.S. Lau, Shashi K. Murthy, Hilton G. Pryce Lewis, Jeffrey A. Caulfield, Karen K. Gleason

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Fully dense fluorocarbon films can have dielectric constants (κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear-CF2-chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.

Original languageEnglish (US)
Pages (from-to)93-96
Number of pages4
JournalJournal of Fluorine Chemistry
Volume122
Issue number1
DOIs
StatePublished - Jul 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biochemistry
  • Environmental Chemistry
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry

Fingerprint

Dive into the research topics of 'Fluorocarbon dielectrics via hot filament chemical vapor deposition'. Together they form a unique fingerprint.

Cite this