Fluorocarbon dielectrics via hot filament chemical vapor deposition

Kenneth K.S. Lau; Shashi K. Murthy; Hilton G. Pryce Lewis; Jeffrey A. Caulfield; Karen K. Gleason

doi:10.1016/S0022-1139(03)00099-X

Fluorocarbon dielectrics via hot filament chemical vapor deposition

Kenneth K.S. Lau, Shashi K. Murthy, Hilton G. Pryce Lewis, Jeffrey A. Caulfield, Karen K. Gleason

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Fully dense fluorocarbon films can have dielectric constants (κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear-CF₂-chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.

Original language	English (US)
Pages (from-to)	93-96
Number of pages	4
Journal	Journal of Fluorine Chemistry
Volume	122
Issue number	1
DOIs	https://doi.org/10.1016/S0022-1139(03)00099-X
State	Published - Jul 1 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Biochemistry
Environmental Chemistry
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry

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10.1016/S0022-1139(03)00099-X

Cite this

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title = "Fluorocarbon dielectrics via hot filament chemical vapor deposition",

abstract = "Fully dense fluorocarbon films can have dielectric constants (κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear-CF2-chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.",

author = "Lau, {Kenneth K.S.} and Murthy, {Shashi K.} and {Pryce Lewis}, {Hilton G.} and Caulfield, {Jeffrey A.} and Gleason, {Karen K.}",

note = "Funding Information: We gratefully acknowledge support from NIH (NO1-NS-9-2323) and the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. We also thank Cornell Nanofabrication Facility, MIT Lincoln Laboratories and DuPont. This work made use of MIT MRSEC Shared Facilities supported by NSF (DMR-9400334). ",

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doi = "10.1016/S0022-1139(03)00099-X",

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AU - Lau, Kenneth K.S.

AU - Murthy, Shashi K.

AU - Pryce Lewis, Hilton G.

AU - Caulfield, Jeffrey A.

AU - Gleason, Karen K.

N1 - Funding Information: We gratefully acknowledge support from NIH (NO1-NS-9-2323) and the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. We also thank Cornell Nanofabrication Facility, MIT Lincoln Laboratories and DuPont. This work made use of MIT MRSEC Shared Facilities supported by NSF (DMR-9400334).

PY - 2003/7/1

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N2 - Fully dense fluorocarbon films can have dielectric constants (κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear-CF2-chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.

AB - Fully dense fluorocarbon films can have dielectric constants (κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear-CF2-chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.

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Fluorocarbon dielectrics via hot filament chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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