TY - GEN
T1 - Exploring Switching Limit of SiC Inverter for Multi-kW Multi-MHz Wireless Power Transfer System
AU - Wang, Yao
AU - Kheirollahi, Reza
AU - Lu, Fei
AU - Zhang, Hua
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Silicon carbide (SiC) MOSFET has significantly facilitated high-power and high-frequency inverter design for wireless power transfer (WPT) systems. However, in the multi-kW multi-MHz area, the application of the SiC full-bridge inverter is still insufficient. This paper aims to explore the switching limit of SiC full-bridge inverter at multi-kW power levels and provides a methodology for MOSFET selection, inverter circuit design, and zero-voltage switching (ZVS) realization. Two sets of inverters are respectively implemented based on isolated gate driver UCC5390 and non-isolated IXRFD631 and tested at a switching frequency of 3MHz-4MHz and an input dc voltage of 350V550V. The experimental results firstly reveal the potential and capability of a SiC full-bridge inverter in achieving kilowatts high power level at multi-MHz switching frequency with 4.39kW at 3MHz and 3.19kW at 4MHz, and a switching limit of 4MHz is proposed for the SiC full-bridge inverter with overall consideration of ZVS availability and inverter safety.
AB - Silicon carbide (SiC) MOSFET has significantly facilitated high-power and high-frequency inverter design for wireless power transfer (WPT) systems. However, in the multi-kW multi-MHz area, the application of the SiC full-bridge inverter is still insufficient. This paper aims to explore the switching limit of SiC full-bridge inverter at multi-kW power levels and provides a methodology for MOSFET selection, inverter circuit design, and zero-voltage switching (ZVS) realization. Two sets of inverters are respectively implemented based on isolated gate driver UCC5390 and non-isolated IXRFD631 and tested at a switching frequency of 3MHz-4MHz and an input dc voltage of 350V550V. The experimental results firstly reveal the potential and capability of a SiC full-bridge inverter in achieving kilowatts high power level at multi-MHz switching frequency with 4.39kW at 3MHz and 3.19kW at 4MHz, and a switching limit of 4MHz is proposed for the SiC full-bridge inverter with overall consideration of ZVS availability and inverter safety.
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U2 - 10.1109/APEC43580.2023.10131448
DO - 10.1109/APEC43580.2023.10131448
M3 - Conference contribution
AN - SCOPUS:85162273025
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2952
EP - 2957
BT - APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023
Y2 - 19 March 2023 through 23 March 2023
ER -