Epitaxial growth and electrical-transport properties of Ti 7Si2C5 thin films synthesized by reactive sputter-deposition

T. H. Scabarozi; J. D. Hettinger; S. E. Lofland; J. Lu; L. Hultman; J. Jensen; P. Eklund

doi:10.1016/j.scriptamat.2011.07.038

Epitaxial growth and electrical-transport properties of Ti ₇Si₂C₅ thin films synthesized by reactive sputter-deposition

T. H. Scabarozi
, J. D. Hettinger
, S. E. Lofland
, J. Lu
, L. Hultman
, J. Jensen
, P. Eklund

Physics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Epitaxial predominantly phase-pure Ti₇Si₂C ₅ thin films were grown onto Al₂O₃(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2 ; the Ti₇Si₂C₅ unit cell comprises alternating Ti₃SiC₂-like and Ti₄SiC₃-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti₇Si₂C ₅ relative to Ti₃SiC₂ and Ti ₄SiC₃ is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of ∼45 μΩ cm.

Original language	English (US)
Pages (from-to)	811-814
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	9
DOIs	https://doi.org/10.1016/j.scriptamat.2011.07.038
State	Published - Nov 2011

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2011.07.038

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@article{b834fd5799ed4810b41eadf051aaf07d,

title = "Epitaxial growth and electrical-transport properties of Ti 7Si2C5 thin films synthesized by reactive sputter-deposition",

abstract = "Epitaxial predominantly phase-pure Ti7Si2C 5 thin films were grown onto Al2O3(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2 ; the Ti7Si2C5 unit cell comprises alternating Ti3SiC2-like and Ti4SiC3-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti7Si2C 5 relative to Ti3SiC2 and Ti 4SiC3 is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of ∼45 μΩ cm.",

author = "Scabarozi, \{T. H.\} and Hettinger, \{J. D.\} and Lofland, \{S. E.\} and J. Lu and L. Hultman and J. Jensen and P. Eklund",

note = "Funding Information: Funding from the European Research Council, the Swedish Research Council, and the Swedish Foundation for Strategic Research is acknowledged. The WDXRF spectrometer and the X-ray diffractometer were acquired by funding from NSF MRI Grants 0821406 and 0960003 .",

year = "2011",

month = nov,

doi = "10.1016/j.scriptamat.2011.07.038",

language = "English (US)",

volume = "65",

pages = "811--814",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "9",

}

TY - JOUR

T1 - Epitaxial growth and electrical-transport properties of Ti 7Si2C5 thin films synthesized by reactive sputter-deposition

AU - Scabarozi, T. H.

AU - Hettinger, J. D.

AU - Lofland, S. E.

AU - Lu, J.

AU - Hultman, L.

AU - Jensen, J.

AU - Eklund, P.

N1 - Funding Information: Funding from the European Research Council, the Swedish Research Council, and the Swedish Foundation for Strategic Research is acknowledged. The WDXRF spectrometer and the X-ray diffractometer were acquired by funding from NSF MRI Grants 0821406 and 0960003 .

PY - 2011/11

Y1 - 2011/11

N2 - Epitaxial predominantly phase-pure Ti7Si2C 5 thin films were grown onto Al2O3(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2 ; the Ti7Si2C5 unit cell comprises alternating Ti3SiC2-like and Ti4SiC3-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti7Si2C 5 relative to Ti3SiC2 and Ti 4SiC3 is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of ∼45 μΩ cm.

AB - Epitaxial predominantly phase-pure Ti7Si2C 5 thin films were grown onto Al2O3(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2 ; the Ti7Si2C5 unit cell comprises alternating Ti3SiC2-like and Ti4SiC3-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti7Si2C 5 relative to Ti3SiC2 and Ti 4SiC3 is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of ∼45 μΩ cm.

UR - https://www.scopus.com/pages/publications/80052813030

UR - https://www.scopus.com/pages/publications/80052813030#tab=citedBy

U2 - 10.1016/j.scriptamat.2011.07.038

DO - 10.1016/j.scriptamat.2011.07.038

M3 - Article

AN - SCOPUS:80052813030

SN - 1359-6462

VL - 65

SP - 811

EP - 814

JO - Scripta Materialia

JF - Scripta Materialia

IS - 9

ER -

Epitaxial growth and electrical-transport properties of Ti ₇Si₂C₅ thin films synthesized by reactive sputter-deposition

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