Epitaxial growth and electrical-transport properties of Ti 7Si2C5 thin films synthesized by reactive sputter-deposition

T. H. Scabarozi, J. D. Hettinger, S. E. Lofland, J. Lu, L. Hultman, J. Jensen, P. Eklund

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Epitaxial predominantly phase-pure Ti7Si2C 5 thin films were grown onto Al2O3(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2 ; the Ti7Si2C5 unit cell comprises alternating Ti3SiC2-like and Ti4SiC3-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti7Si2C 5 relative to Ti3SiC2 and Ti 4SiC3 is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of ∼45 μΩ cm.

Original languageEnglish (US)
Pages (from-to)811-814
Number of pages4
JournalScripta Materialia
Volume65
Issue number9
DOIs
StatePublished - Nov 2011

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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