Electronic, thermal, and elastic properties of Ti3Si 1-xGexC2 solid solutions

P. Finkel; B. Seaman; K. Harrell; J. Palma; J. D. Hettinger; S. E. Lofland; A. Ganguly; M. W. Barsoum; Z. Sun; Sa Li; R. Ahuja

doi:10.1103/PhysRevB.70.085104

Electronic, thermal, and elastic properties of Ti₃Si _1-xGe_xC₂ solid solutions

P. Finkel, B. Seaman, K. Harrell, J. Palma, J. D. Hettinger, S. E. Lofland, A. Ganguly, M. W. Barsoum, Z. Sun, Sa Li, R. Ahuja

Physics

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Abstract

In this paper we report on the electronic, elastic, and thermal properties of Ti₃Si_1-xGe_xC₂. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti₃Si_1-xGe _xC₂ is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x = 1.

Original language	English (US)
Article number	085104
Pages (from-to)	085104-1-085104-6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.70.085104
State	Published - Aug 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.70.085104

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Finkel, P., Seaman, B., Harrell, K., Palma, J., Hettinger, J. D., Lofland, S. E., Ganguly, A., Barsoum, M. W., Sun, Z., Li, S., & Ahuja, R. (2004). Electronic, thermal, and elastic properties of Ti₃Si _1-xGe_xC₂ solid solutions. Physical Review B - Condensed Matter and Materials Physics, 70(8), 085104-1-085104-6. Article 085104. https://doi.org/10.1103/PhysRevB.70.085104

@article{62b65b62ec8a434b92a296802335542d,

title = "Electronic, thermal, and elastic properties of Ti3Si 1-xGexC2 solid solutions",

abstract = "In this paper we report on the electronic, elastic, and thermal properties of Ti3Si1-xGexC2. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti3Si1-xGe xC2 is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x = 1.",

author = "P. Finkel and B. Seaman and K. Harrell and J. Palma and Hettinger, {J. D.} and Lofland, {S. E.} and A. Ganguly and Barsoum, {M. W.} and Z. Sun and Sa Li and R. Ahuja",

note = "Funding Information: S.E.L and J.D.H acknowledge support from the New Jersey Commission on Higher Education and NSF Grant No. DMR 0114073. M.W.B acknowledges partial support for this work from NSF Grant No. DMR 0072067. R.A. thanks VR, Sweden for financial support.",

year = "2004",

month = aug,

doi = "10.1103/PhysRevB.70.085104",

language = "English (US)",

volume = "70",

pages = "085104--1--085104--6",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Physical Society",

number = "8",

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T1 - Electronic, thermal, and elastic properties of Ti3Si 1-xGexC2 solid solutions

AU - Finkel, P.

AU - Seaman, B.

AU - Harrell, K.

AU - Palma, J.

AU - Hettinger, J. D.

AU - Lofland, S. E.

AU - Ganguly, A.

AU - Barsoum, M. W.

AU - Sun, Z.

AU - Li, Sa

AU - Ahuja, R.

N1 - Funding Information: S.E.L and J.D.H acknowledge support from the New Jersey Commission on Higher Education and NSF Grant No. DMR 0114073. M.W.B acknowledges partial support for this work from NSF Grant No. DMR 0072067. R.A. thanks VR, Sweden for financial support.

PY - 2004/8

Y1 - 2004/8

N2 - In this paper we report on the electronic, elastic, and thermal properties of Ti3Si1-xGexC2. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti3Si1-xGe xC2 is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x = 1.

AB - In this paper we report on the electronic, elastic, and thermal properties of Ti3Si1-xGexC2. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti3Si1-xGe xC2 is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x = 1.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

M1 - 085104

ER -

Electronic, thermal, and elastic properties of Ti₃Si _1-xGe_xC₂ solid solutions

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