Electronic, thermal, and elastic properties of Ti3Si 1-xGexC2 solid solutions

P. Finkel, B. Seaman, K. Harrell, J. Palma, J. D. Hettinger, S. E. Lofland, A. Ganguly, M. W. Barsoum, Z. Sun, Sa Li, R. Ahuja

    Research output: Contribution to journalArticlepeer-review

    79 Scopus citations

    Abstract

    In this paper we report on the electronic, elastic, and thermal properties of Ti3Si1-xGexC2. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti3Si1-xGe xC2 is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x = 1.

    Original languageEnglish (US)
    Article number085104
    Pages (from-to)085104-1-085104-6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume70
    Issue number8
    DOIs
    StatePublished - Aug 2004

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Fingerprint

    Dive into the research topics of 'Electronic, thermal, and elastic properties of Ti<sub>3</sub>Si <sub>1-x</sub>Ge<sub>x</sub>C<sub>2</sub> solid solutions'. Together they form a unique fingerprint.

    Cite this