In this paper we report on the electronic, elastic, and thermal properties of Ti3Si1-xGexC2. The conductivities, Hall coefficients, and magnetoresistances are analyzed within a two-band framework assuming temperature-independent charge carrier concentrations. In this framework, Ti3Si1-xGe xC2 is shown to be a compensated material, i.e., the concentration of electrons is nearly equal to that of the holes. Aside from effects of solid solution scattering at low temperature, there appears to be surprisingly little effect on any of the physical properties due to Ge substitution, with the exception of the thermal expansion, which is smallest in x = 1.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Aug 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics