Electric and magnetic field dependence of the conductivity in poly(3-hexylthiophene langmuir-blodgett films

E. Punkka, M. F. Rubner, Jeffrey Hettinger, J. S. Brooks, S. T. Hannahs

Research output: Contribution to journalArticlepeer-review

Abstract

The conductivity of undoped and NOPF6-doped Langmuir-Blodgett thin films of poly(3-hexylthiophene) has been studied under strong electric (up to 60 kV/cm) and magnetic (up to 15 T) fields at low temperatures (down to 4.3 K). The electric-field dependence of the conductivity in doped films fits the theory of charging-energy-limited tunneling between highly conducting regions. In the electric-field-induced conduction mode, the magnetoresistance adopts a positive B2 dependence which is argued to arise from the geometrical contribution corresponding to an extremely high and bias-dependent Hall mobility, over 103 cm2/Vs below 40 K. However, the high Hall mobility was not measurable using a conventional four-point technique. The results can be reproduced in free-standing films of doped poly(3-hexylthiophene). Undoped Langmuir-Blodgett films show a linearly varying positive magnetoresistance the magnitude of which increases with decreasing temperature.

Original languageEnglish (US)
Pages (from-to)4997-5002
Number of pages6
JournalSynthetic Metals
Volume57
Issue number2-3
DOIs
StatePublished - Apr 19 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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