Effects of magnetic field and pressure in magnetoelastic stress reconfigurable thin film resonators

M. Staruch, C. Kassner, S. Fackler, I. Takeuchi, K. Bussmann, S. E. Lofland, C. Dolabdjian, R. Lacomb, P. Finkel

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Abstract

Free-standing CoFe thin-film doubly clamped stress reconfigurable resonators were investigated as a function of magnetic field and pressure. A large uniaxial anisotropy resulting from residual uniaxial tensile stress, as revealed from magnetic hysteresis loops, leads to an easy magnetization axis aligned along the length of the beams. The quality factor of the driven resonator beams under vacuum is increased by 30 times, leading to an enhanced signal-to-noise ratio and a predicted reduction in the intrinsic magnetic noise by a factor of 6, potentially reaching as low as ∼25 pT/√Hz at 1 Torr. Stress reconfigurable sensors operating under vacuum could thus further improve the limit of detection and advance development of magnetic field sensing technology.

Original languageEnglish (US)
Article number032909
JournalApplied Physics Letters
Volume107
Issue number3
DOIs
StatePublished - Jul 20 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Staruch, M., Kassner, C., Fackler, S., Takeuchi, I., Bussmann, K., Lofland, S. E., Dolabdjian, C., Lacomb, R., & Finkel, P. (2015). Effects of magnetic field and pressure in magnetoelastic stress reconfigurable thin film resonators. Applied Physics Letters, 107(3), [032909]. https://doi.org/10.1063/1.4927309