Abstract
The effects of annealing on thick-film resistor noise characteristics were studied experimentally. The annealing process was performed on as-fired, laser trimmed and air-abrasive trimmed resistors. Noise Index measurements showed annealing to be an effective means of reducing resistor noise. Using a temperature range of 200 degree C to 570 degree C, different annealing sequences were performed. They produced NI reductions that depended upon the exact temperature level and resistor state (i. e. , as-fired or trimmed). An analytical investigation of the equation which describes thick-film resistor noise is performed to describe the results of the annealing process graphically. Plots of NI vs. log V show a change in NI constant relating to the resistor material properties and a slight modification of the slope.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Int Soc for Hybrid Microelectronics |
| Pages | 355-359 |
| Number of pages | 5 |
| ISBN (Print) | 0930815130 |
| State | Published - Dec 1 1985 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)