We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured cantilevers when a high voltage is applied on the P b (Z r 0.52 T i 0.48) O 3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response. The reference frequency at which the strain-mediated F e 0.7 G a 0.3 based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)