Data-dependent statistical memory model for passive array of memristive devices

Sangho Shin; Kyungmin Kim; Sung Mo Kang

doi:10.1109/TCSII.2010.2083191

Data-dependent statistical memory model for passive array of memristive devices

Sangho Shin, Kyungmin Kim, Sung Mo Kang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.

Original language	English (US)
Article number	5610713
Pages (from-to)	986-990
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	57
Issue number	12
DOIs	https://doi.org/10.1109/TCSII.2010.2083191
State	Published - Dec 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/TCSII.2010.2083191

Cite this

@article{34268d3a387f4cc2ad349e77f2434bcc,

title = "Data-dependent statistical memory model for passive array of memristive devices",

abstract = "A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.",

author = "Sangho Shin and Kyungmin Kim and Kang, {Sung Mo}",

note = "Funding Information: Manuscript received April 26, 2010; revised August 6, 2010; accepted September 15, 2010. Date of publication October 28, 2010; date of current version December 15, 2010. This work was supported in part by the University of California, Merced. This paper was recommended by Associate Editor G. Grassi.",

year = "2010",

month = dec,

doi = "10.1109/TCSII.2010.2083191",

language = "English (US)",

volume = "57",

pages = "986--990",

journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",

issn = "1549-7747",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Data-dependent statistical memory model for passive array of memristive devices

AU - Shin, Sangho

AU - Kim, Kyungmin

AU - Kang, Sung Mo

N1 - Funding Information: Manuscript received April 26, 2010; revised August 6, 2010; accepted September 15, 2010. Date of publication October 28, 2010; date of current version December 15, 2010. This work was supported in part by the University of California, Merced. This paper was recommended by Associate Editor G. Grassi.

PY - 2010/12

Y1 - 2010/12

N2 - A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.

AB - A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.

UR - http://www.scopus.com/inward/record.url?scp=78650417062&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650417062&partnerID=8YFLogxK

U2 - 10.1109/TCSII.2010.2083191

DO - 10.1109/TCSII.2010.2083191

M3 - Article

AN - SCOPUS:78650417062

SN - 1549-7747

VL - 57

SP - 986

EP - 990

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 12

M1 - 5610713

ER -

Data-dependent statistical memory model for passive array of memristive devices

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this