Data-dependent statistical memory model for passive array of memristive devices

Sangho Shin, Kyungmin Kim, Sung Mo Kang

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.

Original languageEnglish (US)
Article number5610713
Pages (from-to)986-990
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Issue number12
StatePublished - Dec 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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