Complementary structure of memristive devices based passive memory arrays

Sangho Shin, Kyungmin Kim, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper introduces a complementary architecture of memristive devices based passive memories whose unit memory cell is composed of vertically stacked or horizontally placed two memristive devices. This complementary memory architecture does not require sense resistors for cell readout, and thus significantly reduces the memory design complexity by not requiring the design optimization process for the sense resistance. The complementarily written memory array exhibits data-pattern independent voltage detection performance as well as regulated much smaller current consumption compared to the conventional non-complementary passive resistive memories.

Original languageEnglish (US)
Title of host publication2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Pages321-324
Number of pages4
DOIs
StatePublished - Aug 2 2011
Event2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil
Duration: May 15 2011May 18 2011

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
CountryBrazil
CityRio de Janeiro
Period5/15/115/18/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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