Compact models for memristors based on charge-flux constitutive relationships

Sangho Shin, Kyungmin Kim, Sung Mo Kang

Research output: Contribution to journalArticle

175 Scopus citations

Abstract

This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.

Original languageEnglish (US)
Article number5433745
Pages (from-to)590-598
Number of pages9
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume29
Issue number4
DOIs
StatePublished - Apr 1 2010

All Science Journal Classification (ASJC) codes

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Compact models for memristors based on charge-flux constitutive relationships'. Together they form a unique fingerprint.

  • Cite this