TY - JOUR
T1 - Compact models for memristors based on charge-flux constitutive relationships
AU - Shin, Sangho
AU - Kim, Kyungmin
AU - Kang, Sung Mo
N1 - Funding Information:
Manuscript received July 24, 2009; revised October 13, 2009. Current version published March 19, 2010. This work was supported in part by the University of California, Merced. This paper was recommended by Associate Editor, K. Chakrabarty.
PY - 2010/4
Y1 - 2010/4
N2 - This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
AB - This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
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U2 - 10.1109/TCAD.2010.2042891
DO - 10.1109/TCAD.2010.2042891
M3 - Article
AN - SCOPUS:77949878247
SN - 0278-0070
VL - 29
SP - 590
EP - 598
JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IS - 4
M1 - 5433745
ER -