Bilayer, nanoimprint lithography

Brian Faircloth, Henry Rohrs, Richard Tiberio, Rodney Ruoff, Robert R. Krchnavek

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

Nanoimprint lithography has been shown to be a viable means of patterning polymer films in the sub-100 nm range. In this work, we demonstrate the use of a bilayer resist to facilitate the metal liftoff step in imprinter fabrication. The bilayer resist technology exhibits more uniform patterns and fewer missing features than similar metal nanoparticle arrays fabricated with single layer resist. The bilayer resist relies upon the differential solubility between poly(methyl methacrylate) and poly(methyl methacrylate methacrylic acid copolymer). Evidence is presented that shows the technique has a resolution of better than 10 nm.

Original languageEnglish (US)
Pages (from-to)1866-1873
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number4
StatePublished - 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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