Abstract
Expanded mode alignment tolerant optical structures will play an important role in low-cost, large-scale packaging of optoelectronic devices. In this paper, we present two expanded mode structures for operation at 1.55 μm. Our devices use single epitaxial growth and conventional fabrication schemes. High butt-coupling efficiencies (>40%) to a single mode fiber with relaxed alignment tolerances were achieved. The first of our devices uses adiabatic transformation over 500 μm. The second device uses resonant coupling over a much shorter region of 200 μm. The second scheme offers an interesting possibility for monolithic integration of active-passive components. We present the design and simulation results of such an integrated device.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 128-137 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3626 |
| State | Published - Jan 1 1999 |
| Event | Proceedings of the 1999 Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV - San Jose, CA, USA Duration: Jan 28 1999 → Jan 28 1999 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Dagenais, M., Saini, S. S., Vusirikala, V., Bartolo, R. E., Whaley, R. D., Dilli, Z., Hu, Y., Fan, Z. F., Johnson, F. G., Shen, H., Pamalupati, J., Zhou, W., & Stone, D. R. (1999). Alignment tolerant structures for ease of optoelectronic packaging. Proceedings of SPIE - The International Society for Optical Engineering, 3626, 128-137.